Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
No edit summary |
|||
| Line 112: | Line 112: | ||
<br clear="all" /> | <br clear="all" /> | ||
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]= | |||
===KOH solutions=== | |||
{| border="2" cellspacing="0" cellpadding="2" | |||
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | |||
|style="background:WhiteSmoke; color:black"|<b>KOH3</b> | |||
|style="background:WhiteSmoke; color:black"|<b>KOH2</b> | |||
|- | |||
!style="background:silver; color:black;" align="center" width="60"|Purpose | |||
|style="background:LightGrey; color:black"|Wet etch of | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Resist | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Resist and other polymers | |||
|- | |||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"|Etch rates | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon: ~0.04-0.8 µm/min | |||
*Silicon oxide: ~0.02-0.15 µm/min | |||
*Silicon (oxy)nitride: ~0.02-? µm/min | |||
|- | |||