Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 264: | Line 264: | ||
= Charging of non-conductive substrates = | = Charging of non-conductive substrates = | ||
<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top| | <span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top|Go to top of this page]]</span> | ||
All substrates are grounded to the cassette when proper loaded. In a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist. | All substrates are grounded to the cassette when proper loaded. In a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist. | ||