Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 258: | Line 258: | ||
At DTU Danchip, we recommend to use a thin (20 nm) layer of thermally evaporated [[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium|aluminum]] on top of the e-beam resist. Preferably, the thickness of Al and the e-beam dose should be optimised to the features you wish to e-beam pattern, e.g. [http://nedds.co.uk/wp-content/uploads/2013/06/Greer-et-al-DRM-29-July-2012.pdf]. The 20 nm Al seems as a good starting point wherefrom dose and development can be optimised to reach the resolution and feature size required. | At DTU Danchip, we recommend to use a thin (20 nm) layer of thermally evaporated [[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium|aluminum]] on top of the e-beam resist. Preferably, the thickness of Al and the e-beam dose should be optimised to the features you wish to e-beam pattern, e.g. [http://nedds.co.uk/wp-content/uploads/2013/06/Greer-et-al-DRM-29-July-2012.pdf]. The 20 nm Al seems as a good starting point wherefrom dose and development can be optimised to reach the resolution and feature size required. | ||
The process flow for a standard ZEP520 | The process flow for a standard e-beam exposure on ZEP520 with Al on top can be found here [[media:Process_Flow_ZEP_with_Al.docx|Process_Flow_ZEP_with_Al.docx]]. | ||
== ESPACER == | == ESPACER == | ||