Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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If you wish to investigate the charge dissipation using other methods than belwo, please contact [mailto:lithography@danchip.dtu.dk Lithography]. | If you wish to investigate the charge dissipation using other methods than belwo, please contact [mailto:lithography@danchip.dtu.dk Lithography]. | ||
== | == Aluminum coating == | ||
At DTU Danchip, we recommend to use a thin (20 nm) layer of thermally evaporated | At DTU Danchip, we recommend to use a thin (20 nm) layer of thermally evaporated [[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium|aluminum]] on top of the e-beam resist. Preferably, the thickness of Al and the e-beam dose should be optimised to the features you wish to e-beam pattern, e.g. [http://nedds.co.uk/wp-content/uploads/2013/06/Greer-et-al-DRM-29-July-2012.pdf]. The 20 nm Al seems as a good starting point wherefrom dose and development can be optimised to reach the resolution and feature size required. | ||
The process flow for a standard ZEP520 procedure with Al on top can be found here [[media:Process_Flow_ZEP_with_Al.docx|Process_Flow_ZEP_with_Al.docx]]. | The process flow for a standard ZEP520 procedure with Al on top can be found here [[media:Process_Flow_ZEP_with_Al.docx|Process_Flow_ZEP_with_Al.docx]]. | ||
== ESPACER == | == ESPACER == | ||