Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 15: | Line 15: | ||
!style="background:silver; color:black;" align="left"|Purpose | !style="background:silver; color:black;" align="left"|Purpose | ||
|style="background:LightGrey; color:black"|pattern an electron sensitive resist | |style="background:LightGrey; color:black"|pattern an electron sensitive resist | ||
|style="background:WhiteSmoke; color:black"|Mainly for pattering structures with minimum feature size between | |style="background:WhiteSmoke; color:black"|Mainly for pattering structures with minimum feature size between 12 nm - 1 µm | ||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||