Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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<span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top|top of this page]]</span> | <span style="font-size: 90%; text-align: right;">[[Specific_Process_Knowledge/Lithography/EBeamLithography#top|top of this page]]</span> | ||
Even though the electron beam diameter is below 5 nm, the feature and pitch resolution in resist are limited by the forward and backward scattering of the electrons. The forward scattering depends on the electron acceleration voltage, the resist material and thickness. The backward scattering depends on the electron acceleration voltage and the substrate material [http://en.wikipedia.org/wiki/Electron-beam_lithography], [http://en.wikipedia.org/wiki/Proximity_effect_%28electron_beam_lithography%29]. | Even though the electron beam diameter is below 5 nm, the feature and pitch resolution in resist are limited by the forward and backward scattering of the electrons. The forward scattering depends on the electron acceleration voltage, the resist material and thickness. The backward scattering depends on the electron acceleration voltage and the substrate material [http://en.wikipedia.org/wiki/Electron-beam_lithography], [http://en.wikipedia.org/wiki/Proximity_effect_%28electron_beam_lithography%29]. | ||