Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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= Charge dissipating agent = | = Charge dissipating agent = | ||
All substrates are grounded to the cassette when proper loaded. In a non-conducting substrate, the accumulation of charges in the substrates will however destroy the e-beam patterning. To avoid this, a charge dissipating layer is added on top of the e-beam resist; this will provide a conducting layer for the electrons to escape, while high-energy electrons will pass through the layer to expose the resist. | |||
If you wish to investigate the charge dissipation using other methods than belwo, please contact [mailto:lithography@danchip.dtu.dk Lithography]. | |||
== Al coating == | |||
At DTU Danchip, we recommend to use a thin (20 nm) layer of thermally evaporated Aluminum on top of the e-beam resist. Preferably, the thickness of Al and the e-beam dose should be optimised to the features you wish to e-beam pattern, e.g. [http://nedds.co.uk/wp-content/uploads/2013/06/Greer-et-al-DRM-29-July-2012.pdf]. The 20 nm Al seems as a good starting point wherefrom dose and development can be optimised to reach the resolution and feature size required. | |||
The process flow for a standard ZEP520 procedure with Al on top can be found here [[media:Process_Flow_ZEP_with_Al.docx|Process_Flow_ZEP_with_Al.docx]]. | |||
== ESPACER == | |||
We have ESPACER in stock and approved for use in the cleanroom but have not yet had the chance to investigate the material. | |||