Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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== Trilayer resist stack == | == Trilayer resist stack == | ||
As an alternative to PEC, a trilayer reists stack with a thin layer of thermally evaporated Ge can be used [http://avspublications.org/jvst/resource/1/jvstal/v19/i4/p1304_s1]. This reists stack has not yet been tested at DTU Danchip. A process flow | As an alternative to PEC, a trilayer reists stack with a thin layer of thermally evaporated Ge can be used [http://avspublications.org/jvst/resource/1/jvstal/v19/i4/p1304_s1]. This reists stack has not yet been tested at DTU Danchip. A process flow for this procedure can be found here [[media:Process_Flow_Trilayer_Ebeam_Resist.docx|Process_Flow_Trilayer_Ebeam_Resist.docx]], but please contact [[mailto:Lithography@danchip.dtu.dk Lithography]] before use. | ||
= Charge dissipating agent = | = Charge dissipating agent = | ||
* Al coating, FLOW | * Al coating, FLOW | ||
* ESPACER, no flow yet | * ESPACER, no flow yet | ||