Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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The proximity error correction require a forward and a backward range parameter, alfa and beta, and a ratio of backscattered energy to the forward scattered energy, eta. As alfa depends on the electron acceleration voltage, which is constant at 100kV, alfa is in BEAMER fixed to 0.007. Help to find beta and eta can be found [http://nanolithography.gatech.edu/proximity.htm here]. | The proximity error correction require a forward and a backward range parameter, alfa and beta, and a ratio of backscattered energy to the forward scattered energy, eta. As alfa depends on the electron acceleration voltage, which is constant at 100kV, alfa is in BEAMER fixed to 0.007. Help to find beta and eta can be found [http://nanolithography.gatech.edu/proximity.htm here]. | ||
Alternatively, a point-spread function can be used in BEAMER to calculate the optimised dose-variation. | Alternatively, a [http://en.wikipedia.org/wiki/Proximity_effect_%28electron_beam_lithography%29 point-spread function] can be used in BEAMER to calculate the optimised dose-variation. | ||
== Trilayer resist stack == | |||
As an alternative to PEC, a trilayer reists stack with a thin layer of thermally evaporated Ge can be used [http://avspublications.org/jvst/resource/1/jvstal/v19/i4/p1304_s1]. This reists stack has not yet been tested at DTU Danchip. A process flow | |||
= Charge dissipating agent = | = Charge dissipating agent = | ||
* Al coating, FLOW | * Al coating, FLOW | ||
* ESPACER, no flow yet | * ESPACER, no flow yet | ||