Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
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= Proximity Error Correction = | = Proximity Error Correction = | ||
Even though the electron beam diameter is below 5 nm, the feature and pitch resolution | Even though the electron beam diameter is below 5 nm, the feature and pitch resolution in resist are limited by the forward and backward scattering of the electrons. The forward scattering depends on the electron acceleration voltage, the resist material and thickness. The backward scattering depends on the electron acceleration voltage and the substrate material. | ||
As the travel distance of backscattered electrons is fairly large, e-beam patterned structures will be influenced by adjacent e-beam patterned structures, i.e. a proximity effect. These proximity effects can be avoided either by simulating a proximity error correction (PEC) in BEAMER or by using the right stack of e-beam resist. | As the travel distance of backscattered electrons is fairly large, e-beam patterned structures will be influenced by adjacent e-beam patterned structures, i.e. a proximity effect. These proximity effects can be avoided either by simulating a proximity error correction (PEC) in BEAMER or by using the right stack of e-beam resist. | ||