Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions
| Line 224: | Line 224: | ||
= Proximity Error Correction = | = Proximity Error Correction = | ||
Even though the electron beam diameter is below 5 nm, the feature and pitch resolution limits in resist depend on the forward and backward scattering of the electrons. The forward scattering depends on the electron acceleration voltage, the resist material and thickness. The backward scattering depends on the electron acceleration voltage and the substrate material. | |||
As the travel distance of backscattered electrons is fairly large, e-beam patterned structures will be influenced by adjacent e-beam patterned structures, i.e. a proximity effect. These proximity effects can be avoided either by simulating a proximity error correction (PEC) in BEAMER or by using the right stack of e-beam resist. | |||
[http://en.wikipedia.org/wiki/Proximity_effect_%28electron_beam_lithography%29] | |||
[http://en.wikipedia.org/wiki/Electron-beam_lithography] | |||
== Proximity Error Correction (PEC) in BEAMER == | |||
BEAMER is endowed with a software that corrects for proximity errors in the e-beam exposure. You can ready more about this function in the BEAMER manual under Technical Documents [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=292 here]. | |||
* trilayer flow, not tested | * trilayer flow, not tested | ||