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Specific Process Knowledge/Lithography/EBeamLithography: Difference between revisions

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{| border="2" cellspacing="0" cellpadding="10" width="50%"
{| border="2" cellspacing="0" cellpadding="10" width="80%"
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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left"|Purpose  
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|style="background:LightGrey; color:black"|Beam current range
|style="background:LightGrey; color:black"|Beam current range
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*0.1nA to 20nA in normal conditions (see available condition files <span class="plainlinks">[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=log&mach=292&type=status here]</span>)
*0.1nA to 60nA in normal conditions (see available condition files <span class="plainlinks">[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=log&mach=292&type=status here]</span>)
|-
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|style="background:LightGrey; color:black"|Dose range
|style="background:LightGrey; color:black"|Dose range
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