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Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF): Difference between revisions

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Blue film also has a limited life time in BHF. Blue film is mainly used for back side protecting the wafer while etching on the front side. The life time of Blue film is also about ½ hour.
Blue film also has a limited life time in BHF. Blue film is mainly used for back side protecting the wafer while etching on the front side. The life time of Blue film is also about ½ hour.
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
==KOH etching baths==
<br clear="all" />
{| border="2" cellspacing="0" cellpadding="2"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>KOH3</b>
|style="background:WhiteSmoke; color:black"|<b>KOH2</b>
|style="background:WhiteSmoke; color:black"|<b>KOH1</b>
|style="background:WhiteSmoke; color:black"|<b>KOH Fumehood</b>
|-
!style="background:silver; color:black;" align="center" width="60" rowspan="2"|Purpose
|style="background:LightGrey; color:black"|Wet etch of Silicon
|style="background:WhiteSmoke; color:black"|
*Etch of Silicon in 28 wt% KOH
|style="background:WhiteSmoke; color:black"|
*Etch of Silicon in 28 wt% KOH
|style="background:WhiteSmoke; color:black"|
*Etch of Silicon in 28 wt% KOH saturated with IPA
|style="background:WhiteSmoke; color:black"|
*Etch of Silicon in user mixed KOH
|-
|style="background:LightGrey; color:black"|Link to safety APV and KBA
|style="background:WhiteSmoke; color:black"|
*:[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=248 see APV here]
*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
|style="background:WhiteSmoke; color:black"|
*:[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=49 see APV here]
*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
|style="background:WhiteSmoke; color:black"|
*:[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=1906&mach=49 see APV here]
*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
|style="background:WhiteSmoke; color:black"|
*:[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2479&mach=197 see APV here]
*:[http://kemibrug.dk/KBA/CAS/106882/?show_KBA=1&portaldesign=1 see KBA here]
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Etch rates in crystalline silicon (100)
|style="background:WhiteSmoke; color:black"|
*0.4 µm/min (60 °C)
*0.7 µm/min (70 °C)
*1.3 µm/min (80 °C)
|style="background:WhiteSmoke; color:black"|
*0.4 µm/min (60 °C)
*0.7 µm/min (70 °C)
*1.3 µm/min (80 °C)
|style="background:WhiteSmoke; color:black"|
*0.7 µm/min (70 °C)
*0.2 µm/min (70 °C) for Boron doped Si (doping level > 5x10<sup>19</sup> cm<sup>-3</sup>)
|style="background:WhiteSmoke; color:black"|
*Somewhat lower than in the dedicated baths. Approximately 1 µm/min @ 80 °C in 28 wt%
|-
|style="background:LightGrey; color:black"|Etch rates in Thermal SiO2
|style="background:WhiteSmoke; color:black"|
*Theoretical values:
*1.2 nm/min (60 °C)
*6 nm/min (80 °C)
|style="background:WhiteSmoke; color:black"|
*Theoretical values:
*1.2 nm/min (60 °C)
*6 nm/min (80 °C)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|-
|style="background:LightGrey; color:black"|Roughness
|style="background:WhiteSmoke; color:black"|
*Typical: 100-600 Å
|style="background:WhiteSmoke; color:black"|
*Typical: 100-600 Å
|style="background:WhiteSmoke; color:black"|
*May form hillocks (pyramidal)
|style="background:WhiteSmoke; color:black"|
*Typical worse than KOH2 and KOH3
|-
|style="background:LightGrey; color:black"|Anisotropy
|style="background:WhiteSmoke; color:black"|
*The etch rate is very dependent on the crystal orientation of the silicon.
|style="background:WhiteSmoke; color:black"|
*The etch rate is very dependent on the crystal orientation of the silicon.
|style="background:WhiteSmoke; color:black"|
*With IPA some crystal planes etches at a slower rate than for KOH without IPA.
|style="background:WhiteSmoke; color:black"|
*The etch rate is very dependent on the crystal orientation of the silicon.
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
*Max 80 °C (standard etch)
|style="background:WhiteSmoke; color:black"|
*Max 80 °C (standard etch)
|style="background:WhiteSmoke; color:black"|
*Max 70 °C if IPA added
|style="background:WhiteSmoke; color:black"|
*Max 80 °C
|-
|style="background:LightGrey; color:black"|Chemical solution
|style="background:WhiteSmoke; color:black"|
*28 wt% mixed in the ratio
KOH:H<sub>2</sub>O - 500 g : 1000 ml
|style="background:WhiteSmoke; color:black"|
*28 wt% mixed in the ratio
KOH:H<sub>2</sub>O - 500 g : 1000 ml
|style="background:WhiteSmoke; color:black"|
*28 wt% mixed in the ratio
KOH:H<sub>2</sub>O:IPA - 500 g : 1000 ml : ?? ml
|style="background:WhiteSmoke; color:black"|
*Custom made
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*1-25 wafers at a time
|style="background:WhiteSmoke; color:black"|
*1-25 wafers at a time
|style="background:WhiteSmoke; color:black"|
*1-25 wafers at a time
|style="background:WhiteSmoke; color:black"|
*1-7 wafers at a time
|-
|style="background:LightGrey; color:black"|Size of substrate
|style="background:WhiteSmoke; color:black"|
*4” wafers
*6” wafers
|style="background:WhiteSmoke; color:black"|
*4” wafers
|style="background:WhiteSmoke; color:black"|
*4” wafers
|style="background:WhiteSmoke; color:black"|
*2” wafers
*4” wafers
*Small pieces
|-
|style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon oxide
*Silicon (oxy)nitride
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon oxide
*Silicon (oxy)nitride
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon oxide
*Silicon (oxy)nitride
|style="background:WhiteSmoke; color:black"|
*All except for Polymers
|-
|style="background:LightGrey; color:black"|Masking material
|style="background:WhiteSmoke; color:black"|
*Stoichiometric Si3N4
*Silicon rich nitride SiN
*PECVD Si3N4
*Thermal SiO2
|style="background:WhiteSmoke; color:black"|
*Stoichiometric Si3N4
*Silicon rich nitride SiN
*PECVD Si3N4
*Thermal SiO2
|style="background:WhiteSmoke; color:black"|
*Stoichiometric Si3N4
*Silicon rich nitride SiN
*PECVD Si3N4
*Thermal SiO2
|style="background:WhiteSmoke; color:black"|
*Stoichiometric Si3N4
*Silicon rich nitride SiN
*PECVD Si3N4
*Thermal SiO2
|-
|}
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