Specific Process Knowledge/Lithography/Coaters: Difference between revisions

Revision as of 13:14, 24 June 2013

Coaters: Comparison Table

Equipment		SSE Spinner	KS Spinner	Spin Track 1 + 2
Purpose		Spinning and baking of AZ5214E resist Spinning and baking of AZ4562 resist Spinning and baking of e-beam resist	Spinning and baking of AZ5214E resist Spinning and baking of AZ4562 resist Spinning and baking of SU8 resist	In-line substrate HMDS priming Coating and baking of AZ MiR 701 (29cps) resist Coating and baking of AZ nLOF 2020 resist Post-exposure baking at 110°C
Performance	Substrate handling	Cassette-to-cassette Edge handling chuck	Single substrate Non-vacuum chuck for fragile substrates	Cassette-to-cassette
	Permanent media	AZ5214E resist AZ4562 resist Acetone for chuck cleaning Acetone for drip pan	AZ5214E resist PGMEA for edge bead removal Acetone for chuck cleaning	AZ MiR 701 (29cps) resist AZ nLOF 2020 resist PGMEA for backside rinse and edgebead removal PGMEA for spinner bowl cleaning and vapor tip bath
	Manual dispense option	2 automatic syringes	yes pneumatic dispense for SU8 resist	no
Process parameter range	Spindle speed	Range	Range	10 - 9990 rpm
Process parameter range	Parameter 2	Range	Range	Range
Substrates	Batch size	24 50 mm wafers 24 100 mm wafers 24 150 mm wafers	1 100 mm wafer 1 150 mm wafer	25 100 mm wafers
	Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3	Silicon Glass

SSE Spinner

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The SSE spinner MAXIMUS: positioned in Cleanroom 13. SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning on 2", 4" and 6" substrates.

The system is equipped with 2 different resists lines:

AZ5214E and
AZ4562 and
2 syringe lines, which can be used for spinning of e-beam resist.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

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Spin Track 1 + 2

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager

Process information

Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing

Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2/Spin Track 1 + 2 processing

HMDS priming:

The process of HMDS priming on Spin Track 1 + 2 consists of five steps:

Contact bake
Vacuum bake
Priming
Pump-purge
Cooling

The wafer is first baked in contact with the hotplate in order to heat the wafer to the hotplate temperature. The hotplates of the priming modules are set to 50°C. Then the wafer is baked under a low vacuum (~0.5 bar) in order to dehydrate the wafer before HMDS application. The HMDS is applied to the wafer using nitrogen as a carrier gas. 15 liters per minute of dry nitrogen is bubbled through liquid HMDS before flowing across the wafer surface. After the priming, the chamber is pump-purged twice, using a 7s pump to ~0.5 bar and a 10s nitrogen purge at 40 liters per minute. Finally, the wafer is cooled on the priming module coolplate.

The contact angle after HMDS priming is a function of the priming temperature, the priming time, and the surface condition of the wafer. Tests have shown the contact angle to decrease with increasing hotplate temperature, while it increases as a function of priming time at constant temperature. At a priming temperature of 50°C, the contact angle resulting from priming an oxidized silicon wafer for t = 30 - 300s may be approximated by

$\theta =95-119.2*t^{-0.51}$

The condition of the substrate surface is again a function of the substrate type, the substrate history, and the vacuum baking temperature and time. Since the vapor pressure of water at 50°C (0.123 bar) is lower than the vacuum bake pressure of 0.5 bar, the degree of dehydration will be a function of the vacuum baking time. Thus, for thick oxides, the standard of 30s vacuum bake may not be enough to dehydrate the surface sufficiently.

Spin coating:

Dispence. Spin-of. EBR. BSR.

Soft baking:

Contact or proximity. Bake. Cool.

Post-exposure baking:

Contact or proximity. Bake. Cool.

HMDS priming only

The standard HMDS priming process has been developed to mimic the behavior of the IMTEC Star2000 HMDS oven. It produces a contact angle of 81-82° on an oxidized silicon surface.

Flow names, process parameters, and test results:

T1 T2 HMDS Standard

Process: 10s contact bake, 30s vacuum bake, 72s HMDS priming, 5s cooling.

Tested 7/5 2013 on 110nm oxide: 81.4°. Tested 12/6 2013 on 3µm oxide: 81.8°. Tested 20/6 on 15µm oxide (dehydrated 1 hour at 250°C): 68-70°. Tested 21/6 on 15µm oxide (dehydrated 18 hours at 250°C): 71°.

AZ MiR 701 (29cps) coating

Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-of at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.

Flow names, process parameters, and test results:

T1 MiR 701 1um no HMDS
T1 MiR 701 1um with HMDS

Spin-of: 60 s at 9990 rpm.

Tested ?? (with HMDS) on fresh silicon: ? µm.

T1 MiR 701 1,5um no HMDS
T1 MiR 701 1,5um with HMDS

Spin-of: 30 s at 5000 rpm.

Tested 18/6 2013 (with HMDS) on fresh silicon: 1.5? µm.

T1 MiR 701 2um no HMDS
T1 MiR 701 2um with HMDS

Spin-of: 30 s at 2600 rpm.

Tested ?? (with HMDS) on fresh silicon: ? µm.

AZ nLOF 2020 coating

T2 nLOF 2020 2um no HMDS
T2 nLOF 2020 2um with HMDS
T2 nLOF 2020 3um no HMDS
T2 nLOF 2020 3um with HMDS
T2 nLOF 2020 4um no HMDS
T2 nLOF 2020 4um with HMDS
T2 nLOF 2020 5um no HMDS
T2 nLOF 2020 5um with HMDS

Post-exposure baking

T2 5214E image reversal bake
T2 MiR 701 PEB
T2 nLOF 2020 PEB

Link to process pages - e.g. one page for each material

Example:

Equipment performance and process related parameters

Spin Track		1	2
Purpose		HMDS priming Spin coating and soft baking Priming, coating, and baking	HMDS priming Spin coating and soft baking Priming, coating, and baking Post-exposure baking
Resist		AZ MiR 701 (29cps) positive tone	AZ nLOF 2020 negative tone
Performance	Coating thickness	1 - 3 µm	1.6 - 5 µm
Performance	HMDS contact angle	60 - 90° (on SiO2)
Process parameters	Spin speed	10 - 9990 rpm
	Spin acceleration	1000 - 50000 rpm/s
	Hotplate temperature	90°C	110°C
	HMDS priming temperature	50°C
Substrates	Substrate size	100 mm wafers
	Allowed materials	Silicon (with oxide, nitride, or metal films or patterning) Glass (borosilicate and quartz)
	Batch	1 - 25

KS Spinner

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Manual Spinner 1 (Laurell)

The Manual Spinner(Polymers) is placed in fumehood in Cleanroom 3.

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 ===Process information===
 [[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2 processing]]
 [[Specific Process Knowledge/Lithography/Coaters/Spin Track 1 + 2/Spin Track 1 + 2 processing]]
 '''HMDS priming:'''