Specific Process Knowledge/Lithography/Coaters: Difference between revisions

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''Flow names, process parameters, and test results:''
''Flow names, process parameters, and test results:''
*T1 T2 Standard
*T1 T2 HMDS Standard
Process: 10s contact bake (at 50°C). 30s vacuum bake (~0.5 bar). 72s HMDS priming (nitrogen carrier gas). 2 nitrogen pump-purge cycles.
Process: 10s contact bake (at 50°C). 30s vacuum bake (~0.5 bar). 72s HMDS priming (nitrogen carrier gas). 2 nitrogen pump-purge cycles.



Revision as of 15:27, 19 June 2013

Coaters: Comparison Table

Equipment SSE Spinner KS Spinner Spin Track 1 + 2
Purpose
  • Spinning and baking of AZ5214E resist
  • Spinning and baking of AZ4562 resist
  • Spinning and baking of e-beam resist
  • Spinning and baking of AZ5214E resist
  • Spinning and baking of AZ4562 resist
  • Spinning and baking of SU8 resist
  • In-line substrate HMDS priming
  • Coating and baking of AZ MiR 701 (29cps) resist
  • Coating and baking of AZ nLOF 2020 resist
  • Post-exposure baking at 110°C
Performance Substrate handling
  • Cassette-to-cassette
  • Edge handling chuck
  • Single substrate
  • Non-vacuum chuck for fragile substrates
  • Cassette-to-cassette
Permanent media
  • AZ5214E resist
  • AZ4562 resist
  • Acetone for chuck cleaning
  • Acetone for drip pan
  • AZ5214E resist
  • PGMEA for edge bead removal
  • Acetone for chuck cleaning
  • AZ MiR 701 (29cps) resist
  • AZ nLOF 2020 resist
  • PGMEA for backside rinse and edgebead removal
  • PGMEA for spinner bowl cleaning and vapor tip bath
Manual dispense option
  • 2 automatic syringes
  • yes
  • pneumatic dispense for SU8 resist
  • no
Process parameter range Spindle speed
  • Range
  • Range
  • 10 - 9990 rpm
Parameter 2
  • Range
  • Range
  • Range
Substrates Batch size
  • 24 50 mm wafers
  • 24 100 mm wafers
  • 24 150 mm wafers
  • 1 100 mm wafers
  • 1 150 mm wafers
  • 25 100 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3
  • Silicon
  • Glass


SSE Spinner

The SSE spinner MAXIMUS: positioned in Cleanroom 13.

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The SSE spinner MAXIMUS: positioned in Cleanroom 13. SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning on 2", 4" and 6" substrates.

The system is equipped with 2 different resists lines:

  • AZ5214E and
  • AZ4562 and
  • 2 syringe lines, which can be used for spinning of e-beam resist.

The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

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Spin Track 1 + 2

Spin Track 1 + 2 in Cleanroom 3

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager

Process information

HMDS priming only

The standard HMDS priming process has been developed to mimic the behavior of the IMTEC Star2000 HMDS oven. It produces a contact angle of 81-82° on an oxidized silicon surface.

Flow names, process parameters, and test results:

  • T1 T2 HMDS Standard

Process: 10s contact bake (at 50°C). 30s vacuum bake (~0.5 bar). 72s HMDS priming (nitrogen carrier gas). 2 nitrogen pump-purge cycles.

Tested ?/5 2013 on 100nm oxide: 81.4°. Tested ?/6 2013 on 3µm oxide: 81.8°.

AZ MiR 701 (29cps) coating

Spin coating of AZ MiR 701 (29cps) on Spin Track 1 is divided into two or three steps: HMDS priming (optional), spin coating, and soft baking. At the moment, the HMDS priming is equal to the standard priming, but this may be subject to change as our process knowledge grows. Spin coating uses dynamic dispence of 4 ml resist at 800 rpm, followed by spin-of at a thickness dependent spin speed for a thickness dependent time. The wafer is deaccelerated at 1000 rpm/s for 5 seconds before stopping. Soft baking is done at 90°C for 60s. As MiR 701 has a tendency to produce "cotton candy" on the edges, soft baking is performed in 1 mm proximity.

Flow names, process parameters, and test results:

  • T1 MiR 701 1um no HMDS
  • T1 MiR 701 1um with HMDS

Spin-of: 60 s at 9990 rpm.

Tested ?? (with HMDS) on fresh silicon: ? µm.

  • T1 MiR 701 1,5um no HMDS
  • T1 MiR 701 1,5um with HMDS

Spin-of: 30 s at 5000 rpm.

Tested 18/6 2013 (with HMDS) on fresh silicon: 1.5? µm.

  • T1 MiR 701 2um no HMDS
  • T1 MiR 701 2um with HMDS

Spin-of: 30 s at 9990 rpm.

Tested ?? (with HMDS) on fresh silicon: ? µm.

AZ nLOF 2020 coating

  • T2 nLOF 2020 2um no HMDS
  • T2 nLOF 2020 2um with HMDS
  • T2 nLOF 2020 3um no HMDS
  • T2 nLOF 2020 3um with HMDS
  • T2 nLOF 2020 4um no HMDS
  • T2 nLOF 2020 4um with HMDS
  • T2 nLOF 2020 5um no HMDS
  • T2 nLOF 2020 5um with HMDS

Post-exposure baking

  • T2 5214E image reversal bake
  • T2 MiR 701 PEB
  • T2 nLOF 2020 PEB

Link to process pages - e.g. one page for each material

Example:

Equipment performance and process related parameters

Spin Track 1 2
Purpose
  • HMDS priming
  • Spin coating and soft baking
  • Priming, coating, and baking
  • HMDS priming
  • Spin coating and soft baking
  • Priming, coating, and baking
  • Post-exposure baking
Resist

AZ MiR 701 (29cps)

positive tone

AZ nLOF 2020

negative tone

Performance Coating thickness

1 - 3 µm

1.6 - 5 µm

HMDS contact angle

60 - 90° (on SiO2)

Process parameters Spin speed

10 - 9990 rpm

Spin acceleration

1000 - 50000 rpm/s

Hotplate temperature

90°C

110°C

HMDS priming temperature

50°C

Substrates Substrate size

100 mm wafers

Allowed materials

Silicon (with oxide, nitride, or metal films or patterning)

Glass (borosilicate and quartz)

Batch

1 - 25


KS Spinner

The KS spinner is placed in Cleanroom 3.

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Manual Spinner 1 (Laurell)

The Manual Spinner(Polymers) is placed in fumehood in Cleanroom 3.

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