Specific Process Knowledge/Lithography/Coaters: Difference between revisions
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This process produces a contact angle of 81-82° on an oxidized silicon surface. | This process produces a contact angle of 81-82° on an oxidized silicon surface. | ||
''Flow names and test results:'' | |||
*T1 T2 Standard | *T1 T2 Standard | ||
Tested ?/5 2013 on 100nm oxide: 81.4°. Tested ?/6 2013 on 3µm oxide: 81.8°. | Tested ?/5 2013 on 100nm oxide: 81.4°. Tested ?/6 2013 on 3µm oxide: 81.8°. | ||