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Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions

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Jml (talk | contribs)
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image:jmldeep071101 pos5 50mu_013.jpg|The profile of a 50 <math>\mu</math>m trench
image:jmldeep071101 pos5 50mu_013.jpg|The profile of a 50 <math>\mu</math>m trench
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As is clear from the two images ARDE also plays a role in this case: The 2 <math>\mu</math>m trench (widened to about 5-6 <math>\mu</math>m because of undercut/underetching) is only etched 150 <math>\mu</math>m.


== Standardization procedure on the ASE ==
== Standardization procedure on the ASE ==