Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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The process is designed to reach 20 <math>\mu</math>m down in a 2 <math>\mu</math>m trench but as is clear from the image of the corresponding 50 <math>\mu</math>m trench, this one is etched deeper. The reason is the so called Aspect Ratio Dependent Etching or ARDE. | The process is designed to reach 20 <math>\mu</math>m down in a 2 <math>\mu</math>m trench but as is clear from the image of the corresponding 50 <math>\mu</math>m trench, this one is etched deeper. The reason is the so called Aspect Ratio Dependent Etching or ARDE: See below. | ||
=== Deepetch === | === Deepetch === | ||