Specific Process Knowledge/Etch/ASE (Advanced Silicon Etch): Difference between revisions
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The process is designed to reach 20 <math>\mu</math>m down in a 2 <math>\mu</math>m trench but as is clear from the image of the corresponding 50 <math>\mu</math>m trench, this one is etched deeper. | The process is designed to reach 20 <math>\mu</math>m down in a 2 <math>\mu</math>m trench but as is clear from the image of the corresponding 50 <math>\mu</math>m trench, this one is etched deeper. | ||
<gallery caption=" | <gallery caption="Standardization images of the shallolr recipe" widths="300px" heights="300px" perrow="2"> | ||
Image:jmlshal070921 pos1 2mu_09.jpg| | Image:jmlshal070921 pos1 2mu_09.jpg|The profile of a 2 <math>\mu</math>m trench | ||
image:jmlshal070921 pos1 50mu_08.jpg| | image:jmlshal070921 pos1 50mu_08.jpg|The profile of a 50 <math>\mu</math>m trench | ||
</gallery> | </gallery> | ||
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| 5 s | | 5 s | ||
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<gallery caption="Standardization images of the deepetch recipe" widths="300px" heights="300px" perrow="2"> | |||
Image:jmldeep071101 pos1 2mu_010.jpg|The profile of a 2 <math>\mu</math>m trench | |||
image:jmldeep071101 pos5 50mu_013.jpg|The profile of a 50 <math>\mu</math>m trench | |||
</gallery> | |||
== Standardization procedure on the ASE == | == Standardization procedure on the ASE == | ||