Specific Process Knowledge/Characterization/KLA-Tencor Surfscan 6420: Difference between revisions

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Particle counting of an unpatterned surface. A broad range of particles size from 0.15 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films like Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it will not count as particles.  
Particle counting of an unpatterned surface. A broad range of particles size from 0.15 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films like Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it will not count as particles.  


'''The user manual and contact information can be found in LabManager:'''


<!--'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:''' -->
http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=changestatus&page_id=50
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==Overview of the performance of the Surfscan 6420 and some process related parameters==
==Overview of the performance of the Surfscan 6420 and some process related parameters==

Revision as of 10:26, 3 June 2013

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KLA-Tencor Surfscan 6420

The image is from the cleanroom at the place it was refurbish in California.

Particle counting of an unpatterned surface. A broad range of particles size from 0.15 µm to greater than 3 µm can be measured on a polished silicon or epitaxial layers. Thin films like Nitride and thermal Oxide can also be inspected. The system will remove small surface roughness so it will not count as particles.

The user manual and contact information can be found in LabManager:

http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=changestatus&page_id=50

Overview of the performance of the Surfscan 6420 and some process related parameters

Purpose
  • Detecting, counting and sizing of particles (light point defects)
Performance Particles size
  • 0.15 µm to 3 µm
Througput
  • Up to 100 wafer per hour (200 mm)
Repeatbility
  • Within 1%, 1σ (mean count > 500, 0.204 µm diameter latex spheres)
Process parameter range Process Temperature
  • Room temperature
Substrates Batch size
  • 1-25 100 mm wafers
  • 1-25 150 mm wafers
  • 1-25 200 mm wafers (loader has to be changed)
Substrate materials allowed
  • Silicon
  • Thin layers of oxide, nitride and polymer/resist
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