Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 Furnace: LPCVD TEOS (B3)]''' | '''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 Furnace: LPCVD TEOS (B3)]''' | ||
==Overview of the performance of the boron drive-in furnace and some process related parameters== | |||
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!style="background:silver; color:black;" align="center"|Purpose | |||
|style="background:LightGrey; color:black"|Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide | |||
|style="background:WhiteSmoke; color:black"|Oxidation: | |||
*Dry | |||
*Wet: with torch (H<sub>2</sub>+O<sub>2</sub>) | |||
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!style="background:silver; color:black" align="center"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
*Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to make it thicker) | |||
*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker) | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*800-1150 <sup>o</sup>C | |||
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|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*1 atm | |||
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|style="background:LightGrey; color:black"|Gasses on the system | |||
|style="background:WhiteSmoke; color:black"| | |||
*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub> | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*1-30 4" wafer (or 2" wafers) per run | |||
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| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers (new from the box or RCA cleaned) | |||
*From A2 furnace directly (e.g. incl. Predep HF) | |||
*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group] | |||
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==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ||