Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/SiO2 disk and granule source tests in Temescal October 2026: Difference between revisions
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'''Note.''' Density is a controller input, not measured film density. O<sub>2</sub> = 5% is the instrument setting, not gas composition or partial pressure. Run 2 was reported as RT/unheated, but its logged thermocouple temperature rose from 22.0 to 61.6 °C during deposition. The TC channel is not an independent sample-surface temperature measurement. Power is recorded as percent of full scale. | '''Note.''' Density is a controller input, not measured film density. O<sub>2</sub> = 5% is the instrument setting, not gas composition or partial pressure. Run 2 was reported as RT/unheated, but its logged thermocouple temperature rose from 22.0 to 61.6 °C during deposition. The TC channel is not an independent sample-surface temperature measurement. Power is recorded as a percent of full scale. | ||
Source loading, sweep geometry and the temperature condition changed together, so this is not a single-variable comparison. The logs also show different rise/soak settings, including soak-2 levels of 2.8% in Run 1 and 5.0% in Run 2. Thickness milestones refer to the QCM indication. | Source loading, sweep geometry, and the temperature condition changed together, so this is not a single-variable comparison. The logs also show different rise/soak settings, including soak-2 levels of 2.8% in Run 1 and 5.0% in Run 2. Thickness milestones refer to the QCM indication. | ||
== Run 1: solid disks alone == | == Run 1: solid disks alone == | ||