Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions
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SEM reveals that even very short etch time (1s.) is enough to damage SiO<sub>2</sub> reactively sputtered films. The result is presented in the figure. HF attacks the film as ” a whole” leaving the random structure. | SEM reveals that even very short etch time (1s.) is enough to damage SiO<sub>2</sub> reactively sputtered films. The result is presented in the figure. HF attacks the film as ” a whole” leaving the random structure. | ||
<gallery caption="Figure 12. SEM inspection." widths=" | <gallery caption="Figure 12. SEM inspection." widths="900px" heights="400px" perrow="1"> | ||
image:eves_SiO2_wet_etch_SEM_20210809.png| SEM images that shows SiO<sub>2</sub> films after HF exposure. | image:eves_SiO2_wet_etch_SEM_20210809.png| SEM images that shows SiO<sub>2</sub> films after HF exposure. | ||
</gallery> | </gallery> | ||
If the user wishes to etch SiO<sub>2</sub> films gently and controllable, it is recommended to select dry etch methods. | If the user wishes to etch SiO<sub>2</sub> films gently and controllable, it is recommended to select dry etch methods. | ||