Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
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==X-ray Photoelectron Spectroscopy== | ==X-ray Photoelectron Spectroscopy== | ||
X-ray | [[Specific Process Knowledge/Characterization/XPS|X-ray Photo Electron Spectroscopy (XPS)]] was employed to investigate the chemical composition of deposited scandium nitride (ScN) thin films using the [[Specific Process Knowledge/Characterization/XPS/K-Alpha|XPS K-Alpha]] instrument. The analysis was conducted in a 'depth profile' mode, where the film was incrementally etched, and the composition was measured layer by layer. Multiple scans were performed, including survey scans and scans for specific elements like O1s, N1s, Sc2p, Sc3s, and C1s, to gather comprehensive chemical information. | ||
Interpreting the stoichiometry of the ScN film is challenging due to the overlap between the N1s peak and the Sc2p peak. Additionally, while scandium has various interesting electronic states that can be measured and utilized in calculations (such as Sc3s), there is only one electronic state for nitrogen, N1s, which requires careful deconvolution from the Sc2p peak. | Interpreting the stoichiometry of the ScN film is challenging due to the overlap between the N1s peak and the Sc2p peak. Additionally, while scandium has various interesting electronic states that can be measured and utilized in calculations (such as Sc3s), there is only one electronic state for nitrogen, N1s, which requires careful deconvolution from the Sc2p peak. | ||