Specific Process Knowledge/Thin film deposition/Deposition of Scandium Nitride/ScN Reactive Sputtering in Cluster Lesker PC3: Difference between revisions
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The RF ScN process recipe in a Sputter-System Metal-Nitride(PC3) is following: | The RF ScN process recipe in a Sputter-System Metal-Nitride(PC3) is following: | ||
* Recipe Name: <b>MD PC3_Src1 - RF_Downstream with Reactive | * Recipe Name: <b>MD PC3_Src1 - RF_Downstream with Reactive N2</b> | ||
* PC Gun Z-shift Position: Home (00.00 mm) and Extended (95.20 mm) | * PC Gun Z-shift Position: Home (00.00 mm) and Extended (95.20 mm) | ||
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* Ar flow: <b>40 sccm</b> | * Ar flow: <b>40 sccm</b> | ||
* N<sub>2</sub> flow: <b>18 sccm</b> | * N<sub>2</sub> flow: <b>18 sccm</b> | ||
* Deposition time: <b> | * Deposition time: <b>1000 s</b> | ||
* Deposition temperature: <b>400 °C</b> | * Deposition temperature: <b>400 °C</b> | ||
* Pre-sputtering time : 300s (better to give longer time to sputter away the native oxide, especially on a recently installed target) | * Pre-sputtering time : 300s (better to give longer time to sputter away the native oxide, especially on a recently installed target) | ||