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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions

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''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''
''By Bjarke Thomas Dalslet @Nanotech.dtu.dk''


The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Below is a table of results for SiO<sub>2</sub>. Similar studies were carried out for [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker Si] and Ta.
The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure. Below is a table of results for SiO<sub>2</sub>. Similar studies were carried out for [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker Si] and [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering_of_Ta Ta].


The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm.
The "SiO<sub>2</sub> target (RF sputter)" study was done on clean Si substrates. The sputter power was 157W and the pressure 3.5 mTorr using RF sputtering of a SiO<sub>2</sub> target. The film thicknesses were around 42 nm.
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