Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions
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==Tensile stress in SiO<sub>2</sub> films deposited at high temperature== | ==Tensile stress in SiO<sub>2</sub> films deposited at high temperature== | ||
In 2017 Radu Malureanu deposited SiO<sub>2</sub> at 600 °C in order to obtain films with a high tensile stress. More information on this study can be found [[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system|here]]. | In 2017 Radu Malureanu deposited SiO<sub>2</sub> at 600 °C in order to obtain films with a high tensile stress. More information on this study can be found [[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system|here]]. | ||