Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions
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==Substrate heating== | |||
During the test by KJLC, using a wafer with thermocouples attached to it, the temperature of the wafer and the control thermocouple could be tracked. In general, the sample will be about 50 degrees less than the temperature displayed on the system. There are software interlocks that control/protect the heater as well as a hardware interlock that will prevent the heater from turning on when the chamber is at atmosphere or if there is insufficient water flow on the system. | |||
There are software interlocks that will not allow the transfer port to open while the heater is on. Also, it will not allow the heater to turn on if there are no assigned wafer in the chamber, and also will not allow the chamber vent valve to open if the temperature shows above 80 degrees Celsius. | |||
There is no sensor to detect if a sample is physically present. If a user transfers an empty wafer carrier into a process chamber, the wafer ID will move accordingly and the heater can be turned on. | |||
A sample transferring can be done while the sample is hot but not while the heater is on. The heater thermocouples will cool very rapidly as soon as the heater is turned off so there is no set temperature. A sample transfer unload should be done when the temperature is below 300 degrees Celsius. | |||
===Substrate heating procedure=== | |||
There are dedicated recipes to turn on a heater: | |||
* If PC1 is used, select “Master Heater PC1 - On” | |||
* If PC3 is used, select “Master Heater PC3 - On” | |||
==Batch process== | ==Batch process== | ||