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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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<br clear="all" />
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==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|SINSTD80
|30
|20
|1000
|500
|80
|
|-
|SINSTD96
|30
|20
|1000
|500
|96
|
|-
|1SiN
|40
|20
|1000
|700
|150
|
|-
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1SiN
|
Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) ''Old shower head''<br>
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) ''Old shower head''
|
|
'''~2-4%''' (2015-04-24 BGHE)<br>
'''~5%''' in the middel (4") (2014-08-13 BGHE) ''Old shower head''<br>
'''~10%''' over 3 wafers (2014-08-13 BGHE) ''Old shower head''
|
|
|
|-
|SINSTD80
|68nm/min (2014-07-07 JML)- unstable deposition rate
|
|
|
|
|
|-
|SINSTD96 - unstable deposition rate
|
|
|
|
|
|
|-
|}


<br clear="all" />
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|-
|-
|}
|}
==Recipes on PECVD2 for deposition of silicon nitride and silicon oxynitride ==
===Recipes===
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|SINSTD80
|30
|20
|1000
|500
|80
|
|-
|SINSTD96
|30
|20
|1000
|500
|96
|
|-
|1SiN
|40
|20
|1000
|700
|150
|
|-
|}
===Expected results===
{| border="1" cellspacing="0" cellpadding="5"
|-
|Recipe name
|Deposition rate [nm/min]
|RI
|Uniformity [%]
|Stress [MPa]
|BHF etch rate [Å/min]
|Comments
|-
|1SiN
|
Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br>
In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) ''Old shower head''<br>
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) ''Old shower head''
|
|
'''~2-4%''' (2015-04-24 BGHE)<br>
'''~5%''' in the middel (4") (2014-08-13 BGHE) ''Old shower head''<br>
'''~10%''' over 3 wafers (2014-08-13 BGHE) ''Old shower head''
|
|
|
|-
|SINSTD80
|68nm/min (2014-07-07 JML)- unstable deposition rate
|
|
|
|
|
|-
|SINSTD96 - unstable deposition rate
|
|
|
|
|
|
|-
|}


==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. <span style="color:Red">Expired!</span>:PECVD1 has been decommissioned==
==Recipes on PECVD1 for deposition of silicon nitride and silicon oxynitride. <span style="color:Red">Expired!</span>:PECVD1 has been decommissioned==
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