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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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|-
|-
|Depoition rate
|Depoition rate
|10.4 - 13.0 nm/min
|~40 nm/min
|-
|-
|Non-uniformity
|Non-uniformity
|<2.0 %
|<3.0 %
|-
|-
|Refractive Index
|Refractive Index