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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions

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Line 102: Line 102:
|Uniformity [%]<br \>[Std./mean]
|Uniformity [%]<br \>[Std./mean]
|Stress [MPa]
|Stress [MPa]
|KOH etch rate [Å/min]
|-  
|-  
|MFSiNLS
|MFSiNLS
Line 108: Line 109:
|~4
|~4
|~-30
|~-30
|~2.5
|-
|-
|LFSiN
|LFSiN
Line 114: Line 116:
|~3
|~3
|~-630
|~-630
|~
|-
|-
|HFSiN
|HFSiN
Line 120: Line 123:
|~2
|~2
|~460
|~460
|~
|-
|-
|}
|}
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