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Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon/Boron doped poly-Si and a-Si: Difference between revisions

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[[image:Boron concentration2.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Thomas Pedersen, Nanotech, Sep 2015.]]
[[image:Boron concentration2.jpg|627x424px|left|thumb|Boron concentration measured by SIMS. Result from Thomas Pedersen, Nanotech, Sep 2015.]]
==Boron-doped amorphous silicon by using 4" LPCVD polysilicon furnace (B4) ==
''Result from Trine Holm Christensen, @Space, Feb. 2015''
====Process parameters====
'''Pressure:'''  250 mtorr
'''Temperature:''' 580 °C
'''Silane (SiH<sub>4</sub>) flow:''' 80 sccm
'''Diborane (B<sub>2</sub>H<sub>6</sub>) flow:''' 7 sccm
'''Time:''' 75 min
'''Anneal:''' @950°C for 60 min
'''Test wafer position:''' Center of the boat