Specific Process Knowledge/Thin film deposition/Deposition of Silicon Nitride/Deposition of Silicon Nitride using PECVD: Difference between revisions
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Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br> | Deposition rate in the middle of two wafers: '''49nm/min+-1nm/min''' (2015-04-24 BGHE) <br> | ||
In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) <br> | In the middel: '''72.6-76.4 nm/min''' (2014-08-13 BGHE) ''Old shower head''<br> | ||
Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) | Variation over 3 wafers: '''71.4-78.6 nm/min''' (2014-08-13 BGHE) ''Old shower head'' | ||
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'''~2-4%''' (2015-04-24 BGHE)<br> | '''~2-4%''' (2015-04-24 BGHE)<br> | ||
'''~5%''' in the middel (4") (2014-08-13 BGHE)<br> | '''~5%''' in the middel (4") (2014-08-13 BGHE)''Old shower head''<br> | ||
'''~10%''' over 3 wafers (2014-08-13 BGHE) | '''~10%''' over 3 wafers (2014-08-13 BGHE)''Old shower head'' | ||
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