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=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
'''<p style="color:red;">The Electroplater Technotrans microform.200 has been decomissioned. For electroplating, please contact DTU Mechanical Engineering.</p>'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/... click here]'''
[[Category: Equipment|Thin film Electroplating Ni]]
<!-- Replace "http://labadviser.danchip.dtu.dk/..." wih the link to the Labadviser page-->
[[Category: Thin Film Deposition|Electroplating Ni]]


== Name of equipment ==
= Technotrans microform.200=


Write a short description of the equipment(s).  
[[image:Electroplater-D3.jpg|200x200px|right|thumb|Electroplating-Ni positioned in cleanroom D-3]]


'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:'''
The Technotrans microform.200 (Electroplating-Ni in LabManager) is a machine capable of depositing nickel electrochemically. This is done by lowering the sample into an electrolyte containing nickel ions and then apply a voltage across the sample and the anode. The anode is a titanium basket filled with nickel pellets. The cathode is the sample to be coated with nickel.
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[[image:Cluster1.jpg|200x200px|right|thumb|Image(s) of the equipment(s)]]
At the anode metallic nickel is oxidized to nickel ions:
Ni (s) &rArr; Ni<sup>2+</sup> (aq) + 2 e<sup>-</sup>
At the cathode (the sample surface), nickel ions from solution are reduced to metallic nickel:
Ni<sup>2+</sup> (aq) + 2 e<sup>-</sup> &rArr; Ni (s)
The minimal charge accepted by the software on the machine is 0.1 Ah (Ampere-hours). This corresponds to roughly 2 µm of nickel on a four inch wafer. You can abort a program prematurely to achieve even lower thicknesses, but this requires manual control of the machine.
The maximum allowed thickness is ~1,4 mm (1400 µm), since a higher thickness will make the release of the sample difficult and likely damage the sample holder. This corresponds to a charge of 53-54 Ah on a four inch wafer. Please contact Nanolab before processing your wafer if you intend to deposit more than ~500 µm of nickel, since this can involve special challenges regarding uniformity, roughness and sample release after plating.
The plating bath is an aqueous solution of nickel sulfamate, boric acid and sulfamic acid. The bath is moderately acidic (pH = 3,70). The pH is kept constant by an automatic pH measurement and sulfamic acid dosing module. The temperature of the bath is 52°C. The sample will spin at 60 RPM during deposition.
Uniformity across a 4" wafer is around 5% for the standard processes (the edge being slightly thicker than the center of the sample). Running at high current densities will deposit a nickel layer that is quite soft. Decreasing current density will increase tensile strength of the deposited nickel.


<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=18 LabManager]


== Process information ==
==Equipment performance and process related parameters==


Link to process pages - e.g. one page for each material
{| border="2" cellspacing="0" cellpadding="2"


Example:
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Parameter
*[[Specific Process Knowledge/Etch/Etching of Silicon/Si etch using RIE1 or RIE2|Etch of silicon using RIE]]
|style="background:WhiteSmoke; color:black"|<b>Value</b>
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using RIE1 or RIE2|Etch of silicon oxide using RIE]]
|-
*[[Specific Process Knowledge/Etch/Etching of Silicon Nitride/Etch of Silicon Nitride using RIE|Etch of silicon nitride using RIE]]
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Sample dimensions
*[[Specific Process Knowledge/Etch/Etching of Polymer/Etch of Photo Resist using RIE|Etch of photo resist using RIE]]
|style="background:LightGrey; color:black"|Diameter
|style="background:WhiteSmoke; color:black"|
50, 100 or 150 mm (~ 2", 4" or 6")


==Equipment performance and process related parameters==
|-
|style="background:LightGrey; color:black"|Sample thickness
|style="background:WhiteSmoke; color:black"|
Maximum 1,0 mm


|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
52°C
|-
|style="background:LightGrey; color:black"|pH
|style="background:WhiteSmoke; color:black"|
3,5 - 3,8 (Recommended by manufacturer)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Sample requirements
|style="background:LightGrey; color:black"|Seed metal
|style="background:WhiteSmoke; color:black"|
Most commonly ~85-100 nm of NiV
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
Most materials allowed. See below.
|-
| style="background:LightGrey; color:black"|Forbidden materials
|style="background:WhiteSmoke; color:black"|
Copper, cobalt. See machine manual on LabManager for details
|}
<br clear="all" />
{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b>
|style="background:WhiteSmoke; color:black"|<b>Electroplating-Ni</b>
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|  
|style="background:LightGrey; color:black"|  
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Purpose 1
Electrochemical deposition of nickel
*Purpose 2
|style="background:WhiteSmoke; color:black"|
*Purpose 1
*Purpose 2
*Purpose 3
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Response 1
|style="background:LightGrey; color:black"|Thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range 1
~20 - 1000 µm
*Performance range 2
 
|style="background:WhiteSmoke; color:black"|
*Performance range 1
*Performance range 2
*Performance range 3
|-
|-
|style="background:LightGrey; color:black"|Response 2
|style="background:LightGrey; color:black"|Uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Performance range
Around 2-10% (depending on sample and process)
|style="background:WhiteSmoke; color:black"|
*Performance range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
52°C
|style="background:WhiteSmoke; color:black"|
 
*Range
|-
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:LightGrey; color:black"|pH
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Range
~3,65 (maintained automatically)
|style="background:WhiteSmoke; color:black"|
*Range
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 1 x 50 mm wafer
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 1 x 100 mm wafer
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 1 x 150 mm wafer
*<nowiki>#</nowiki> 150 mm wafers
*Maximum sample thickness: 1,0 mm
|style="background:WhiteSmoke; color:black"|
 
*<nowiki>#</nowiki> small samples
*<nowiki>#</nowiki> 50 mm wafers
*<nowiki>#</nowiki> 100 mm wafers
*<nowiki>#</nowiki> 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Most materials '''except copper and cobalt'''.
*Allowed material 2
*Ask Nanolab for details.
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-  
|-  
|}
|}


== DTU Nanolab Standard Programs for Electroplating of Nickel ==
Three different standard programs have been made by DTU Nanolab. They have all been made to fabricate nickel shims for use in the polymer injection molding machine at DTU Nanolab. For this purpose a nickel thickness of around 340-360 µm is optimal. By experimentation it has been found that the required charge for this sample thickness is 18,3 Ah. The only difference between the different standard programs is the time required for depositing the nickel. The three different standard programs deposit the ~350 µm of nickel in about 4, 6 or 12 hours respectively.
The following figure shows the current profile during the first 2 hours of the programs:
[[Image:CurrentProfiles2019.png|center|Current profiles of standard programs]]
As can be seen from the illustration the first 30 minutes of all standard processes are identical. All processes use a slow ramping of the current. This is to make sure that some material is deposited which can conduct a higher current. Starting a plating process at several amperes is very likely to damage the sample (and possibly the sample holder) because the seed metal layer (usually 50-120 nm thick) cannot support such high currents.
The Standard programs are named using the following convention: '''DCHimmXX.X-YY''' where '''DCH''' indicates it's a process developed by Nanolab, '''imm''' that is a process developed for producing samples for the '''i'''njection '''m'''olding '''m'''achine, '''XX.X''' denotes the charge in Ah (Ampere-hours) and '''YY''' denotes the approximate process time in hours.
<br clear="all" />
==Comparison of standard processes==
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
!
!DCHimm18.3-04
!DCHimm18.3-06
!DCHimm18.3-12
|-
|-
|-style="background:WhiteSmoke; color:black"
!Charge [Ah]
|18,3
|18,3
|18,3
|-
|-
|-style="background:WhiteSmoke; color:black"
!Expected nickel thickness
|350 µm
|350 µm
|350 µm
|-
|-
|-style="background:LightGrey; color:black"
!Maximum current [A]
|
5,5
|
3,5
|
1,5
|-
|-
|-style="background:WhiteSmoke; color:black"
!Process time [hh:mm:ss]
|
04:10:55
|
06:12:52
|
12:28:01
|-
|-
|-style="background:LightGrey; color:black"
!Process comments
|
A fast program that allows one to produce two samples in a normal working day. Usually works fine for rapid prototyping.
|
A compromise between desired material properties (hardness, ductility, roughness) and process time. Will result in a sample that will be useful for most standard injection molding processes.
|
A slower process that in return results in lower roughness and stronger mechanical properties. A good choice for shims that will be used with 'harsh' injection molding parameters (high temperatures and high pressures).
|-
|}
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<br clear="all" />
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