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Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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==Etching of Chromium==
==Etching of Chromium==
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Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by dry etch]]
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
<br clear="all" />
<br clear="all" />


==Comparison of Chromium Etch Metodes==
==Comparison of Chromium Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 1]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/DRIE-Pegasus/Pegasus-2|DRIE-Pegasus 2]]
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Wet etch of Cr that you need to mix your self
|Wet etch of Cr premixed (Chrome etch 18)
|Wet etch of Cr premixed
|Dry plasma etch of Cr
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|Sputtering of Cr - pure physical etch
|Primarily shallow dry etching of silicon but also thin layers of SiO2, TaO2 and Cr
|-
|-


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!Etch rate range
!Etch rate range
|
|
*~40-100nm/min
*~150nm/min at room temperature
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*~?nm/min
|
|
*~14 nm/min (depending on features size and etch load)  
*~14 nm/min (depending on features size and etch load)  
|  
|  
*~30nm/min (not tested yet)  
*~30nm/min (not tested yet)  
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* very slow
|-
|-


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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Etch profile
!Etch profile
|
*Isotropic
|
|
*Isotropic
*Isotropic
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|
|
*Anisotropic (angles sidewalls, typical around 70 dg)
*Anisotropic (angles sidewalls, typical around 70 dg)
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*Anisotropic (vertical sidewalls)
|-
|-


|-
|-
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*Any size and number that can go inside the beaker in use
*Any size and number that can go inside the beaker in use
|
|
*Any size and number that can go inside the beaker in use
* 150 mm wafers
|
* Smaller wafers or pieces on a 150 mm carrier wafer
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
Smaller pieces glued to carrier wafer
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
* 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
* 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
* 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
* 200mm wafer
|
* 150mm wafer
* Smaller wafers or pieces on 150mm carrier
|-
|-


|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!Allowed materials
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
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*Polymers
*Polymers
*Capton tape
*Capton tape
|
* Silicon
* Silicon oxides
* Silicon nitrides
* Thin layers of Cr, TaO2
|-
|-


|}
|}
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