Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
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==Etching of Titanium== | ==Etching of Titanium== | ||
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions. | Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions. | ||
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]] | *[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]] | ||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/ | *[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]] | ||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Sputtering of | *[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]] | ||
<br clear="all" /> | <br clear="all" /> | ||
==Comparison of | ==Comparison of Titanium Etch Methodes== | ||
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! | ! | ||
![[Specific Process Knowledge/Etch/Wet | ![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]] | ||
![[Specific Process Knowledge/Etch/Wet | ![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]] | ||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | ![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | ||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | ![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | ||
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!Generel description | !Generel description | ||
| | |BHF Etch of titanium with or without photoresist mask. | ||
| | |Cold RCA1 mix etch of titanium (as stripper or with eagle resist). | ||
|Dry plasma etch of | |Dry plasma etch of Ti | ||
|Sputtering of | |Sputtering of Ti - pure physical etch | ||
|- | |- | ||
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!Etch rate range | !Etch rate range | ||
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*~ | *~?nm/min | ||
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*~?nm/min | *~?nm/min | ||
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*~ | *~50-200 nm/min (depending on features size and etch load and recipe settings) | ||
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*~ | *~20nm/min | ||
|- | |- | ||
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*smaller pieces on a carrier wafer | *smaller pieces on a carrier wafer | ||
*<nowiki>#</nowiki>1 100mm wafers ( | *<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer) | ||
*<nowiki>#</nowiki>1 150mm wafers | *<nowiki>#</nowiki>1 150mm wafers | ||
| | | | ||
Smaller pieces glued to carrier wafer | Smaller pieces glued to carrier wafer | ||
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Latest revision as of 13:36, 18 April 2024
Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.
All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.
Feedback to this page: click here
Etching of Titanium
Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Titanium Etch Methodes
Ti wet etch 1 | Ti wet etch 2 | ICP metal | IBE (Ionfab300+) | |
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Generel description | BHF Etch of titanium with or without photoresist mask. | Cold RCA1 mix etch of titanium (as stripper or with eagle resist). | Dry plasma etch of Ti | Sputtering of Ti - pure physical etch |
Etch rate range |
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Etch profile |
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Substrate size |
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Smaller pieces glued to carrier wafer
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Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
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