Specific Process Knowledge/Etch/Etching of Chromium: Difference between revisions

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Ething of Chromium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions.
==Etching of Chromium==


==Wet etching of Chromium==
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
[[Image:fumehoodetch-chrom.jpg|300x300px|thumb|Fume hood: positioned in cleanroom 2. <br />Wet Etch of Chromium can take place in a beaker in this fume hood]]
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]]
Wet etching of chromium at Danchip is done making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. We have two solution for this:
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by ICP metal]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|Sputtering of Cr]]
<br clear="all" />


# HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate  - 90ml:1200ml:15g - standard at Danchip
==Comparison of Chromium Etch Methods==
# Commercial chromium etch


Etch rate are depending on the level of oxidation of the metal.
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"
|-


====How to mix the Chromium etch 1:====
|-
#Take a beaker and add 15g of cerisulphate.
|-style="background:silver; color:black"
#Add a little water while stirring - make sure all lumps are gone.
!
#Add water until 600 ml - keep stirring (use magnetic stirring)
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch]]
#Add 90 ml HNO<sub>3</sub>
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
#When the cerisulphate is completely dissolved (clear liquid) you can add the other 600 ml of wafer.
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
|-


|-
|-style="background:WhiteSmoke; color:black"
!Generel description
|Wet etch of Cr premixed (Chrome etch 18)
|Dry plasma etch of Cr
|Sputtering of Cr - pure physical etch
|-


<br clear="all" />
|-
|-style="background:LightGrey; color:black"
!Etch rate range
|
*~150nm/min at room temperature
|
*~14 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-


===Overview of the data for the chromium etches===
|-
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:WhiteSmoke; color:black"
!  
!Etch profile
! Chromium etch 1
! Chromium etch 2
|-
| '''General description'''
|
|
Etch of chromium
*Isotropic
|
|
Etch of chromium
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-
| '''Chemical solution'''
|HNO<sub>3</sub>:H<sub>2</sub>O:cerisulphate  - 90ml:1200ml:15g
|.
|-
| '''Process temperature'''
|Room temperature


|.


|-
|-
 
|-style="background:LightGrey; color:black"
| '''Possible masking materials'''
!Substrate size
|
Photoresist (1.5 µm AZ5214E)
|
|
.
*Any size and number that can go inside the beaker in use
|-
|'''Etch rate'''
|
|
~40-100 nm/min
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
|
.
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-
|'''Batch size'''
 
|
1-25 wafers at a time
|
.
|-
|-
|'''Size of substrate'''
|-style="background:WhiteSmoke; color:black"
!Allowed materials
|
|
4" wafers
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
.
|-
|'''Allowed materials'''
|
|
No restrictions.
*Silicon
Make a note on the bottle of which materials have been processed.
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
.
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}
== Dry etching of chromium ==
On the [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch]] tool a recipe for chromium is being developed.

Latest revision as of 15:47, 6 February 2023

Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.

Feedback to this page: click here


Etching of Chromium

Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.


Comparison of Chromium Etch Methods

Cr wet etch ICP metal IBE (Ionfab300+)
Generel description Wet etch of Cr premixed (Chrome etch 18) Dry plasma etch of Cr Sputtering of Cr - pure physical etch
Etch rate range
  • ~150nm/min at room temperature
  • ~14 nm/min (depending on features size and etch load)
  • ~30nm/min (not tested yet)
Etch profile
  • Isotropic
  • Anisotropic (vertical sidewalls)
  • Anisotropic (angles sidewalls, typical around 70 dg)
Substrate size
  • Any size and number that can go inside the beaker in use
  • smaller pieces on a carrier wafer
  • #1 100mm wafers (when set up to 100mm wafers)
  • #1 150mm wafers (when set up to 150mm wafers)

Smaller pieces glued to carrier wafer

  • #1 50mm wafer
  • #1 100mm wafer
  • #1 150mm wafer
  • #1 200mm wafer
Allowed materials

No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals

  • Silicon
  • Quartz/fused silica
  • Photoresist/e-beam resist
  • PolySilicon,
  • Silicon oxide
  • Silicon (oxy)nitride
  • Aluminium
  • Titanium
  • Chromium
  • Silicon
  • Silicon oxides
  • Silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
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