Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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==Results of Design of Experiments optimization of magnetic stack etching ( | '''Feedback to this page''': '''[mailto:plasma@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE%E2%81%84IBSD_Ionfab_300/IBE_magnetic_stack_etch click here]''' | ||
<br> '''''The work on this page was done Kristian Hagsted Rasmussen, DTU Nanolab, unless otherwise stated''''' | |||
=Etching magnetic stacks= | |||
Magnetic stacks can be etched or more precisly milled in the Ion Beam Etcher (IBE). Below is presented some work done on milling stacks of magnetic layers. | |||
==Results of Design of Experiments optimization of magnetic stack etching (Kristian Hagsted Rasmussen@nanotech.dtu.dk spring 2011)== | |||
===Process parameters=== | ===Process parameters=== | ||
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===Some SEM profile images of the etched stacks=== | ===Some SEM profile images of the etched stacks=== | ||
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End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | ||
Resist stripping can be hard due to burned resist, to remedy this try to lower the current. Changing the | |||
===Problems with resists stripping after etching=== | |||
Resist stripping after the etch can be hard due to burned resist, to remedy this try to lower the current. Changing the current will change the sidewall angle and new studies of etch profiles will be necessary. For help, discussion and further info please contact the dry etch group [mailto:dryetch@nanolab.dtu.dk]. | |||
===Design of Experiment results=== | ===Design of Experiment results=== | ||
The etch rate and corner angle are dependent on several parameters each. Below | The etch rate and corner angle are dependent on several parameters each. Below two graphs showing these dependencies are shown. Note that the values are fitted and may not represent the actual value after etch, however feel free to use the graphs to estimate the values for your test run. | ||
{| border="1" cellspacing="1" cellpadding="2" | {| border="1" cellspacing="1" cellpadding="2" | ||
|[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | |[[image:IBE magnetic DoE etch rate.jpg |600x300px|thumb|center|The etch rate did not show any dependency on incident angle. The shown results are fitted to the DoE data and may not give an accurate measure of etch rate.]] | ||
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* Good end point detection by SIMS. | * Good end point detection by SIMS. | ||
* Burned resist: Lower current, 300 mA can limit resist burning. Note this <b>will</b> affect pattern transfer. | * Burned resist: Lower current, 300 mA can limit resist burning. Note this <b>will</b> affect pattern transfer. | ||
* Hare ears due to redeposition, thinner resist can limit the size. | * Hare ears (also called fences) due to redeposition, thinner resist can limit the size. | ||