Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano36

The Sinano3.6 recipe

Recipe Sinano3.6

Recipe	Gas	BCl3 5 sccm, HBR 15 sccm
	Pressure	10 mTorr, Strike 3 secs @ 5 mTorr
	Power	900 W CP, 60 W PP
	Temperature	20 degs
	Hardware	100 mm Spacers
	Time	180 secs
Conditions	Run ID	441, 442 ID
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	190 nm zep etched down to 56 nm

• The results of the Sinano3.6 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:BCl3 5 sccm, HBr 15 sccm, 10 mTorr, Strike 3 secs @ 5 mTorr, 900 W CP, 60 W PP, 20 degs, 180 secs

Nominal trench line width	'	'	30	60	90	120	150	Average	Std. dev.
Etch rate	nm/min		24	85	94	94	96	79	31
Sidewall angle	degs		80	83	83	83	83	83	2
CD loss	nm/edge		-22	-23	-34	-35	-31	-29	6
CD loss foot	nm/edge		-22	-14	-19	-17	-11	-17	4
Bowing			5	13	21	21	17	15	6
Bottom curvature			-30	-14	-9	6	5	-8	15
Zep etch rate								45