Specific Process Knowledge/Etch/ICP Metal Etcher/silicon: Difference between revisions
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*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano| | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/ICP_Metal_Etcher/silicon click here]''' | ||
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== Silicon etching on the ICP Metal Etcher == | |||
<!--Page reviewed by jmli 2/2-2023 --> | |||
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In the primary silicon etcher at Nanolab, the [[Specific Process Knowledge/Etch/DRIE-Pegasus|DRIE-Pegasus]], silicon is etched using a fluorine based plasma (with SF<sub>6</sub> as etch gas). Silicon is also etched by chlorine and bromine. | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Chlorine/Bromine etch of nanostructures in silicon]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/isotropic| Isotropic etching in silicon]] | |||
Latest revision as of 16:38, 2 February 2023
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Silicon etching on the ICP Metal Etcher
Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab
In the primary silicon etcher at Nanolab, the DRIE-Pegasus, silicon is etched using a fluorine based plasma (with SF6 as etch gas). Silicon is also etched by chlorine and bromine.