Specific Process Knowledge/Characterization/SEM: Scanning Electron Microscopy: Difference between revisions

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[[image:SEM-Leo.jpg|200x200px|right|thumb|The Leo SEM]]
[[image:SEM-FEI-1.jpg|200x200px|right|thumb|The FEI SEM]]
[[image:SEM-Jeol.jpg|200x200px|right|thumb|The Jeol SEM is located outside the cleanroom in the basement ]]


== Scanning electron microscopy at Danchip==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/SEM:_Scanning_Electron_Microscopy  click here]'''


The four SEM's at Danchip cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.
''This page is written by DTU Nanolab  internal''


The 'workhorse' SEM that will cover most users needs is the [[/Leo|Leo SEM]]. It is a very reliable and rugged instrument that provides high quality images of most samples. Excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers may be acquired on the [[/Leo|Leo SEM]]. As such, we prefer that new users that have no prior SEM experience get trained on the Leo SEM before they start using the FEI or Zeiss.
=Scanning Electron Microscopy at Nanolab=
There is a large range of scanning electron microscopes (SEMs) at DTU Nanolab. The first couple of sections on this page are about the SEMs in and around the fabrication part of Nanolab in building 346 and 451. The last section is about the SEMs in building 314, which is our dedicated characterization facility.


The [[/Zeiss|Zeiss SEM]] is the newest SEM in the cleanroom. It's a state-of-the-art SEM that will produce excellent images on almost any sample. Operated by the same user interface as the Leo, it is quite straight forward to change between the two instruments.
== Scanning electron microscopy in and around the cleanroom==
{{Template:ContentbySEMresponsibles}}


The [[/FEI|FEI SEM]] was acquired to cope with the growing need for polymer related imaging. It is a versatile microscope with two vacuum modes (High Vacuum and Low Vacuum) and 6 different detectors, offering excellent resolution on any type of sample or material. This great performance, however, requires a skilled operator that knows how to achieve it. Also, we have learned that the high degree of sophistication and the great number of detectors make it much less robust compared to the other SEM's. It is therefore the intention that only users with special needs (for instance thick polymers, glass substrates or EDX/micromanipulator experiments) that will be trained. Furthermore, the instrument is equipped with a Oxford Inca EDX system and a Kleindiek micromanipulator with a Capres 4 point probe.
The four SEMs in building 346 and 451 cover a wide range of needs both in the cleanroom and outside: From fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to ultra high resolution images on any type of sample intended for publication.  


Outside the cleanroom in the basement of building 347, the [[/Jeol|Jeol SEM]] provides a possibilty of imaging samples that do not go into the cleanroom.
* The [[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]] is located in the basement outside the cleanroom. It is serving two purposes: Serving the users that have samples from outside the cleanroom and serving as training tool; all new SEM users with no/little SEM experience must be trained on this tool and gain basic knowledge (typically 10 hours of usage) here before being qualified for training on the SEMs in the cleanroom.


'''The user manuals, quality control procedures and results, user APVs, technical information and contact information can be found in LabManager:'''
* The [[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]] and [[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] are located in the cleanroom where they serve as general imaging tools for samples that have been fabricated in the cleanroom. Like SEM Supra 1, they are VP models from Carl Zeiss and will produce excellent images on any sample. The possibility of operating at higher chamber pressures in the VP mode makes imaging of bulk non-conducting samples possible. The [[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]] is also equipped with an airlock and an EDX detector.


[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=37| The SEM Leo page in LabManager],
* The [[Specific_Process_Knowledge/Characterization/SEM_Gemini_1|SEM Gemini 1]] is a state-of-the-art SEM from Carl Zeiss that was installed in the cleanroom in the autumn of 2023. It has an impressive range of detectors and modes that are intended to be used for the most demanding samples.
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=239| The SEM FEI page in LabManager],
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=275| The SEM Zeiss page in LabManager],
[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=149| The SEM Jeol page in LabManager],


== Process information ==
* The [[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]] is a tabletop SEM that is located in the basement outside the cleanroom. It has a limited resolution, but it is fast and easy to use, also for non-conducting samples. Training in the others SEMs is not required to use this SEM.
*[[Specific Process Knowledge/Characterization/SEM|SEMming]]


==Equipment performance and process related parameters==
SEM Supra 1, 2 and 3 and the SEM Gemini 1 are all manufactured by Carl Zeiss. The SEM Supra 1, 2 and 3 all have the same graphical user interface and nearly identical electron optics. But there are there are small hardware and software differences, thus a training is needed for each SEM you want to use.


{| border="2" cellspacing="0" cellpadding="2"
The SEM Tabletop 1 is manufactured by Hitachi.


== Common challenges in scanning electron microscopy ==
*[[/samplemount| Sample mounting]]
==Comparison of SEM's in building 346/451==
{| border="2" cellspacing="0" cellpadding="0"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>RIE1</b>
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]]
|style="background:WhiteSmoke; color:black"|<b>RIE2</b>
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_2|SEM Supra 2]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Gemini_1|SEM Gemini 1]]
|style="background:WhiteSmoke; color:black" align="center"|[[Specific_Process_Knowledge/Characterization/SEM_Tabletop_1|SEM Tabletop 1]]
<!--|style="background:WhiteSmoke; color:black" align="center"|[[Specific Process Knowledge/Characterization/SEM FEI QUANTA 200 3D|FEI Quanta 200 3D]]-->
|-
|-
!style="background:silver; color:black;" align="center"|Purpose  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Model
|style="background:LightGrey; color:black"|Dry etch of  
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 60 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss Supra 40 VP
|style="background:WhiteSmoke; color:black" align="center"| Zeiss GeminiSEM 560
|style="background:WhiteSmoke; color:black" align="center"| SEM Tabletop 1
<!--|style="background:WhiteSmoke; color:black" align="center"| FEI Quanta 200 3D-->
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Purpose  
|style="background:LightGrey; color:black" align="center" | Imaging and measurement of
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
* Conducting samples
*Silicon oxide
* Semi-conducting samples
*Silicon (oxy)nitride
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
*Resist
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
|style="background:WhiteSmoke; color:black"|
* Conducting samples
* Semi-conducting samples
* Thin (~ 5 µm <) layers of non-conducting materials such as polymers
* Thick polymers, glass or quartz samples
<!--|style="background:WhiteSmoke; color:black"|
* Conductive samples-->
|-
|style="background:LightGrey; color:black" align="center" |Other purpose
|style="background:WhiteSmoke; color:black"| <!-- comment -->
|style="background:WhiteSmoke; color:black"|
* Surface material analysis using EDX
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon oxide
*Silicon (oxy)nitride
*Resist and other polymers
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black;" align="center" width="60"|Instrument location
|style="background:LightGrey; color:black"|Etch rates
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Basement of building 346
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab in building 346
|style="background:WhiteSmoke; color:black"|
*Cleanroom of DTU Nanolab in building 346
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Cleanroom of DTU Nanolab in building 346
*Silicon oxide: ~0.02-0.15 µm/min
*Silicon (oxy)nitride: ~0.02-? µm/min
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon: ~0.04-0.8 µm/min
*Building 451 - room 913
*Silicon oxide: ~0.02-0.15 µm/min
(in the North-East corner of the building's basement)
*Silicon (oxy)nitride: ~0.02-? µm/min
<!--|style="background:WhiteSmoke; color:black"|
*DTU CEN-->
 
|-
|-
|style="background:LightGrey; color:black"|Anisotropy
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black" rowspan="2" align="center" |Resolution
|style="background:Whitesmoke; color:black" colspan="5" align="center"| The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
|-
|style="background:WhiteSmoke; color:black"|
* 1-2 nm (limited by vibrations)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Can vary from isotropic to anisotropic with vertical
* 1-2 nm (limited by vibrations)
:sidewalls and on to a physical etch where the sidewalls
:are angled but without etching under the mask.
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Can vary from isotropic to anisotropic with vertical
* 1-2 nm (limited by vibrations)
:sidewalls and on to a physical etch where the sidewalls
:are angled but without etching under the mask.
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Max pressure
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*800 mTorr
* 1-2 nm (limited by vibrations)
<!--|style="background:WhiteSmoke; color:black"|
* ~3.5 nm (limited by instrument)-->
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*949 mTorr
* ~25 nm (limited by instrument)
|-
|-
|style="background:LightGrey; color:black"|Max R.F. power
!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Instrument specifics
|style="background:LightGrey; color:black" align="center" |Detectors
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*600 W
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* 4 Quadrant Backscatter electron (QBSD)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*600 W
* Secondary electron (Se2)
|-
* Inlens secondary electron (Inlens)
|style="background:LightGrey; color:black"|Gas flows
* 4 Quadrant Backscatter electron (QBSD)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
* Secondary electron (Se2)
* Inlens secondary electron (Inlens)
* High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
* Variable pressure secondary electron (VPSE)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SF<sub>6</sub>: 0-52 sccm
* Secondary electron (Se2)
*O<sub>2</sub>: 0-99 sccm
* Inlens secondary electron (Inlens)
*CHF<sub>3</sub>: 0-100 sccm
* Inlens backscatter electron (Inlens ESB)
*CF<sub>4</sub>: 0-42 sccm
* Retractable, column mounted six segment backscatter electron (aBSD)
*Ar: 0-146 sccm
* Variable pressure secondary electron (VPSE)
*N<sub>2</sub>: 0-100 sccm
* Retractable, four segment tranmitted electron (aSTEM)
*C<sub>2</sub>F<sub>6</sub>: 0-24 sccm
<!--|style="background:WhiteSmoke; color:black"|
* Secondary electron (Everhart-Thornley (ETD))
* Backscatter electron (BSD) - Add-on
* Large Field Detector (LFD) - Add-on
* CCD camera -->
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*SF<sub>6</sub>: 0-130 sccm
* Secondary electron (SE)
*O<sub>2</sub>: 0-99 sccm
* Backscatter electron (BSE)
*CHF<sub>3</sub>: 0-99 sccm
*CF<sub>4</sub>: 0-84 sccm
*Ar: 0-145 sccm
*N<sub>2</sub>: 0-99 sccm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black" align="center" |Stage
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 4" wafer
* X, Y: 130 &times; 130 mm
*1 2" wafer (use Al carrier with Si dummy wafer)
* T: -4 to 70<sup>o</sup>
*Several smaller samples (use Al carrier with Si dummy wafer)
* R: 360<sup>o</sup>
* Z: 50 mm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 4" wafer (use Al carrier with Si dummy wafer)
* X, Y: 150 &times; 150 mm
*1 2" wafer (use Al carrier with Si dummy wafer)
* T: -10 to 70<sup>o</sup>
*1 6" wafer (requires 6" setup)
* R: 360<sup>o</sup>
*Several smaller samples (use Al carrier with Si dummy wafer)
* Z: 50 mm
|-
|style="background:WhiteSmoke; color:black"|
| style="background:LightGrey; color:black"|Allowed materials
* X, Y: 130 &times; 130 mm
* T: -4 to 70<sup>o</sup>
* R: 360<sup>o</sup>
* Z: 50 mm
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
* X, Y: 130 &times; 130 mm
*Silicon oxide (with boron, phosphorous and germanium)
* T: -4 to 70<sup>o</sup>
*Silicon nitrides (with boron, phosphorous and germanium)
* R: 360<sup>o</sup>
*Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
* Z: 50 mm
*Resists: AZ resists, e-beam resists, SU8, DUV resists
*Aluminium as thin film layer on your sample
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon
* X, Y: 35 mm
*Silicon oxide (with boron, phosphorous and germanium)
* T: No tilt
*Silicon nitrides (with boron, phosphorous and germanium)
* R: No rotation
*Pure quartz, fused silica (not Pyrex, Tempax and other glasses)
* Z: 0 mm
*Resists: AZ resists, e-beam resists, SU8, DUV resists
*Other olymers (ask the Plasma group for permission)
*Aluminium as thin film layer on your sample
*Other metals (<5% coverage of the wafer)
|-
|}
 
 
 
[[image:SEM-Leo.jpg|200x200px|right|thumb|The Leo SEM has its own dedicated room: Cleanroom 9]]
 
We have four SEM's at Danchip. Together they cover a wide range of needs both in the cleanroom and outside: From the fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to the ultra high resolution images on any type of sample intended for publication.
 
The 'old workhorse' SEM that will cover most users needs is the [[/Leo|Leo SEM]]. It is a very reliable and rugged instrument that provides high quality images of most samples. Due to its robustness new users only need a mandatory two hour training session before they are free to use it by themselves. It is a standard high vacuum instrument equipped with a field emission gun, 3 high vacuum electron detectors (Se2, Inlens and RBSD) and a Röntec EDX system. You can obtain excellent images on a large variety of materials such as semiconductors, semiconductor oxides or nitrides, metals, thin films and some polymers. We prefer that new users that have no prior SEM experience get trained on the Leo SEM before they start using the FEI or Zeiss.
 
[[image:SEM-FEI-1.jpg|200x200px|right|thumb|The FEI SEM has its own dedicated room: Cleanroom 10]]
 
The [[/FEI|FEI SEM]] has been acquired to cope with the growing need for polymer and e-beam related imaging. It is an extremely versatile microscope with two vacuum modes (High Vacuum and Low Vacuum) and 7 different detectors, offering excellent resolution on any type of sample or material. This great performance, however, requires a skilled operator that knows how to achieve it. Also, we have learned that the high degree of sophistication and the great number of detectors make it much less robust compared to the other SEM's. It is therefore the intention that only users with special needs (for instance thick polymers, glass substrates or EDX/micromanipulator experiments) that will be trained. Furthermore, the instrument is equipped with a Oxford Inca EDX system and a Kleindiek micromanipulator with a Capres 4 point probe.
 
The [[/Zeiss|Zeiss SEM]] is the newest SEM in the cleanroom.
 
[[image:SEM-Jeol.jpg|200x200px|right|thumb|The Jeol SEM is located outside the cleanroom in the basement ]]
 
[[/Jeol|Jeol SEM]]
The less advanced [[/Jeol|Jeol SEM]] offers a great alternative for many types of SEM needs. If you have to check the result of an etch process, a lift-off etc. before you proceed with the process sequence, the [[/Jeol|Jeol SEM]] is a much better choice. It is simple, faster to use, has a very low sample exchange time and is by far more accessible than any of the other SEMs. There is a very good chance that it is free when you need it. On heavily charging polymers such as SU-8 it even does a better job than the Leo SEM. To use it, a 1-2 hour training session is necessary.
 
 
{| border="2" cellspacing="0" cellpadding="4" align="center"
!
!SEM - Zeiss
!SEM - FEI
!SEM - Leo
!SEM - Jeol
|-
!Model
|Zeiss Supra 55 VP
|FEI Nova 600 NanoSEM
|Leo 1550 SEM
|Jeol JSM 5500 LV SEM
|-
|-
!Electron emitter type
|style="background:LightGrey; color:black" align="center" |Electron source
|FEG (Field Emission Gun)
|style="background:Whitesmoke; color:black" colspan="4" align="center"| FEG (Field Emission Gun) source
|FEG (Field Emission Gun)
|style="background:WhiteSmoke; color:black"|
|FEG (Field Emission Gun)
* Thermionic tungsten filament
|Tungsten filament
<!--|style="background:WhiteSmoke; color:black"|
* Tungsten filament-->
|-
|-
!Vacuum modes
|style="background:LightGrey; color:black" align="center" |Operating pressures
|
|style="background:WhiteSmoke; color:black"|
|High vacuum (>2*10<math>^{-4}</math>mbar) and Low vacuum (0.1-1.9 mbar)  
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
|High vacuum (>2*10<math>^{-5}</math>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|High vacuum and Low vacuum
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum (0.1 mbar-2 mbar)
|style="background:WhiteSmoke; color:black"|
* Fixed at High vacuum (2 &times; 10<sup>-4</sup>mbar - 10<sup>-6</sup>mbar)
* Variable at Low vacuum
** Standard VP (variable pressure): 5-60 Pa
** Nano VP, 350 um beamsleeve aperture: 5-150 Pa
** Nano VP, 800 um beamsleeve aperture: 5-40 Pa
|style="background:WhiteSmoke; color:black"|
* Conductor vacuum mode: 5 Pa
* Standard vacuum mode: 30 Pa
* Charge-up reduction vacuum mode: 50 Pa
<!--|style="background:WhiteSmoke; color:black"|
* High vacuum and Low vacuum-->
|-
|-
!Detectors
|style="background:LightGrey; color:black" align="center" |Options
|
|style="background:WhiteSmoke; color:black"|
|High and Low vacuum detectors of SE and BSE electrons, HiVac Inlens SE detector and high resolution Low vacuum detector
* All software options available
|SE, Inlens SE and BSE detectors
* Electron magnetic noise cancellations system
|High vacuum SE and BSE detector
|style="background:WhiteSmoke; color:black"|
* Antivibration platform
* Fjeld M-200 airlock taking up to 8" wafers
* Oxford Instruments X-Max<sup>N</sup> 50 mm<sup>2</sup> SDD EDX detector and AZtec software package
|style="background:WhiteSmoke; color:black"|
*High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
|style="background:WhiteSmoke; color:black"|
* Antivibration platform
* Electron magnetic noise cancellations system
* Zeiss airlock taking up to 6" wafers
* Plasma cleaner
* Sample bias option
|style="background:WhiteSmoke; color:black"|
<!--|style="background:WhiteSmoke; color:black"|
* Focused ion beam (FIB) (Ga<sup>+</sup> ions)-->
|-
|-
!Substrate size
!style="background:silver; color:black" align="center" valign="center" rowspan="3" align="center" |Substrates
|
|style="background:LightGrey; color:black" align="center" |Sample sizes
|Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
|Up to 6" wafer with 4" full view
* Up to 6" wafer with full view  
|Up to 4" wafer with full view
|style="background:WhiteSmoke; color:black"|
* Up to 8" wafer with 6" view
|style="background:WhiteSmoke; color:black"|
Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
Up to 6" wafer with full view
|style="background:WhiteSmoke; color:black"|
*  Up to 70 mm with full wiew
<!--|style="background:WhiteSmoke; color:black"|
* Wafers won´t fit without a proper holder. The height of the sample is critical, should be as small, as possible-->
|-
|-
!Additional equipment
| style="background:LightGrey; color:black" align="center" |Allowed materials
|
|style="background:WhiteSmoke; color:black"|
|Kleindiek micromanipulator with Capres 4 point probe
* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
|
|style="background:WhiteSmoke; color:black"|
|  
* Any standard cleanroom materials
|-
|style="background:WhiteSmoke; color:black"|
!Best obtainable lateral resolution (strongly dependent on user skills and sample type)
* Any standard cleanroom materials
|
|style="background:WhiteSmoke; color:black"|
|Down to 1-2 nm (Limiting factor: Beam)
* Any standard cleanroom materials
|Down to 10 nm (Limiting factor: Vibrations)
|style="background:WhiteSmoke; color:black"|
|Down to 20-30 nm (Limiting factor: Vibrations)
* Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
|-
* Some biological samples (ask for permission)
!General availability
<!--|style="background:WhiteSmoke; color:black"|
|
* Conductive materials
|Good
* No biological samples-->
|Poor
|Excellent
|-  
|-  
!Ease of use
|
|A sophisticated user interface with many features and many different detectors: Complicated
|A simple user interface with joystick and a limited number of detectors: Relatively simple
|A simple user interface with joystick with one detector: Very simple
|-
!User level access
|
|Only experienced SEM users, masters/Ph.D students with special needs will be trained
|Any cleanroom user
|Any cleanroom user
|-
!Best usage
|
|High resolution imaging of any sample
|High resolution imaging of any non-polymer sample
|Fast in-process imaging
|-
!EDX analysis
|
|Oxford Inca system
|Röntec system
|Not available
|-
|}
|}


<br clear="all" />


 
==Comparison of the SEMs at DTU Nanolab - building 307/314 [[image:Under_construction.png|50px]]==
 
{{SEM comparison table 314}}
 
==[[/FEI | FEI SEM]] - ''FEI Nova 600 NanoSEM'' ==
 
==[[/Leo | Leo SEM]] - ''Leo 1550 '' ==
 
==[[/Jeol | Jeol SEM]] - ''Jeol JSM 5500 LV '' ==
 
==[[/SEM: Scanning Electron Microscopy/Zeiss|Zeiss SEM]]==

Latest revision as of 14:10, 19 December 2023

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Scanning Electron Microscopy at Nanolab

There is a large range of scanning electron microscopes (SEMs) at DTU Nanolab. The first couple of sections on this page are about the SEMs in and around the fabrication part of Nanolab in building 346 and 451. The last section is about the SEMs in building 314, which is our dedicated characterization facility.

Scanning electron microscopy in and around the cleanroom

Unless otherwise stated, the content of this page was created by the SEM responsibles at DTU Nanolab

The four SEMs in building 346 and 451 cover a wide range of needs both in the cleanroom and outside: From fast in-process verification of different process parameters such as etch rates, step coverages or lift-off quality to ultra high resolution images on any type of sample intended for publication.

  • The SEM Supra 1 is located in the basement outside the cleanroom. It is serving two purposes: Serving the users that have samples from outside the cleanroom and serving as training tool; all new SEM users with no/little SEM experience must be trained on this tool and gain basic knowledge (typically 10 hours of usage) here before being qualified for training on the SEMs in the cleanroom.
  • The SEM Supra 2 and SEM Supra 3 are located in the cleanroom where they serve as general imaging tools for samples that have been fabricated in the cleanroom. Like SEM Supra 1, they are VP models from Carl Zeiss and will produce excellent images on any sample. The possibility of operating at higher chamber pressures in the VP mode makes imaging of bulk non-conducting samples possible. The SEM Supra 2 is also equipped with an airlock and an EDX detector.
  • The SEM Gemini 1 is a state-of-the-art SEM from Carl Zeiss that was installed in the cleanroom in the autumn of 2023. It has an impressive range of detectors and modes that are intended to be used for the most demanding samples.
  • The SEM Tabletop 1 is a tabletop SEM that is located in the basement outside the cleanroom. It has a limited resolution, but it is fast and easy to use, also for non-conducting samples. Training in the others SEMs is not required to use this SEM.

SEM Supra 1, 2 and 3 and the SEM Gemini 1 are all manufactured by Carl Zeiss. The SEM Supra 1, 2 and 3 all have the same graphical user interface and nearly identical electron optics. But there are there are small hardware and software differences, thus a training is needed for each SEM you want to use.

The SEM Tabletop 1 is manufactured by Hitachi.

Common challenges in scanning electron microscopy

Comparison of SEM's in building 346/451

Equipment SEM Supra 1 SEM Supra 2 SEM Supra 3 SEM Gemini 1 SEM Tabletop 1
Model Zeiss Supra 40 VP Zeiss Supra 60 VP Zeiss Supra 40 VP Zeiss GeminiSEM 560 SEM Tabletop 1
Purpose Imaging and measurement of
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
  • Thick polymers, glass or quartz samples
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
  • Thick polymers, glass or quartz samples
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
  • Thick polymers, glass or quartz samples
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
  • Thick polymers, glass or quartz samples
  • Conducting samples
  • Semi-conducting samples
  • Thin (~ 5 µm <) layers of non-conducting materials such as polymers
  • Thick polymers, glass or quartz samples
Other purpose
  • Surface material analysis using EDX
Instrument location
  • Basement of building 346
  • Cleanroom of DTU Nanolab in building 346
  • Cleanroom of DTU Nanolab in building 346
  • Cleanroom of DTU Nanolab in building 346
  • Building 451 - room 913

(in the North-East corner of the building's basement)

Performance Resolution The resolution of a SEM is strongly dependent on the type of sample and the skills of the operator. The highest resolution is probably only achieved on special samples
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • 1-2 nm (limited by vibrations)
  • ~25 nm (limited by instrument)
Instrument specifics Detectors
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • 4 Quadrant Backscatter electron (QBSD)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • 4 Quadrant Backscatter electron (QBSD)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
  • Variable pressure secondary electron (VPSE)
  • Secondary electron (Se2)
  • Inlens secondary electron (Inlens)
  • Inlens backscatter electron (Inlens ESB)
  • Retractable, column mounted six segment backscatter electron (aBSD)
  • Variable pressure secondary electron (VPSE)
  • Retractable, four segment tranmitted electron (aSTEM)
  • Secondary electron (SE)
  • Backscatter electron (BSE)
Stage
  • X, Y: 130 × 130 mm
  • T: -4 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 150 × 150 mm
  • T: -10 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 130 × 130 mm
  • T: -4 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 130 × 130 mm
  • T: -4 to 70o
  • R: 360o
  • Z: 50 mm
  • X, Y: 35 mm
  • T: No tilt
  • R: No rotation
  • Z: 0 mm
Electron source FEG (Field Emission Gun) source
  • Thermionic tungsten filament
Operating pressures
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum (0.1 mbar-2 mbar)
  • Fixed at High vacuum (2 × 10-4mbar - 10-6mbar)
  • Variable at Low vacuum
    • Standard VP (variable pressure): 5-60 Pa
    • Nano VP, 350 um beamsleeve aperture: 5-150 Pa
    • Nano VP, 800 um beamsleeve aperture: 5-40 Pa
  • Conductor vacuum mode: 5 Pa
  • Standard vacuum mode: 30 Pa
  • Charge-up reduction vacuum mode: 50 Pa
Options
  • All software options available
  • Electron magnetic noise cancellations system
  • Antivibration platform
  • Fjeld M-200 airlock taking up to 8" wafers
  • Oxford Instruments X-MaxN 50 mm2 SDD EDX detector and AZtec software package
  • High Definition four quadrant Angular Selective Backscattered electron detector (HDAsB)
  • Antivibration platform
  • Electron magnetic noise cancellations system
  • Zeiss airlock taking up to 6" wafers
  • Plasma cleaner
  • Sample bias option
Substrates Sample sizes
  • Up to 6" wafer with full view
  • Up to 8" wafer with 6" view
  • Up to 6" wafer with full view
  • Up to 6" wafer with full view
  • Up to 70 mm with full wiew
Allowed materials
  • Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
  • Any standard cleanroom materials
  • Any standard cleanroom materials
  • Any standard cleanroom materials
  • Any standard cleanroom material and samples from the Laser Micromachining tool and the Polymer Injection Molding tool
  • Some biological samples (ask for permission)


Comparison of the SEMs at DTU Nanolab - building 307/314

Equipment Nova QFEG AFEG Helios
Purpose
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and both On and Off axis TKD
  • In-situ experiments with Heating and Gas injection
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • Environmental control using Peltier stage
  • Cryogenic sample fixing/stabilization using cryo stage
  • X Ray Analysis with EDS
  • Conductive samples in High Vac
  • Charge reduction in Low Vac
  • X Ray Analysis with EDS and WDS
  • Conductive samples in High Vac
  • Micro and Nano milling/fabrication using various gases and FIB
  • X Ray Analysis with EDS
  • Crystallographic analysis using EBSD and Off Axis TKD
Equipment position Building 314 Room 060 Building 314 Room 011 Building 314 Room 034 Building 314 Room 061
Resolution The resolution of a SEM is strongly dependent on sample type and the operator. Resolution quoted is using sputtered gold on carbon
  • High Vacuum operation in Mode II:
    • 1.0 nm at 15 kV (TLD detector and optimum working distance)
    • 1.8 nm at 1 kV (TLD detector and optimum working distance)
  • Low Vacuum operation in Mode II:
    • 1.5 nm at 10 kV (Helix detector and optimum working distance)
    • 1.8 nm at 3 kV (Helix detector and optimum working distance)
  • High vacuum
    • 0.8 nm at 30 kV (STEM)
    • 1.0 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)
  • High vacuum with beam deceleration option
    • 3.0 nm at 1 kV (BD mode + BSE)
  • Low vacuum - 1.4 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE)
    • 3.0 nm at 3 kV (SE)
  • Extended vacuum mode (ESEM)
    • 1.4 nm at 30 kV (SE)
  • High vacuum
    • 0.8 nm at 30 kV (STEM)
    • 1.0 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE) - 3.0 nm at 1 kV (SE)
  • High vacuum with beam deceleration option
    • 3.0 nm at 1 kV (BD mode + BSE)
  • Low vacuum - 1.4 nm at 30 kV (SE)
    • 2.5 nm at 30 kV (BSE)
    • 3.0 nm at 3 kV (SE)
  • Electron Column Operation in Mode II
    • 0.8nm @15kV
    • 0.9nm @1kV
  • Ion Column
    • 4.5nm @ 30kV
Detectors
  • ETD/TLD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • Helix Low Vac SE
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • TKD Transmission Kikuchi Diffraction
  • STEM Scanning Transmission Electron Microscopy
  • GAD Low Vac BSED
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD Secondary Electrons
  • BSED Back Scatter Electrons
  • LVD/LFD Low Vac SE
  • GSED ESEM SE
  • EDS X Ray by energy
  • STEM Scanning Transmission Electron Microscopy
  • ETD/TLD Secondary Electrons
  • ABS Annular BSED
  • EDS X Ray by energy
  • EBSD Electron Back Scatter Diffraction
  • CDEM Continuos Dinode Electron Multiplier
Stage specifications
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manual
  • X 50mm
  • Y 50mm
  • Z 50mm
  • R 360⁰
  • T 70⁰ Manual
  • X 150mm Piezo
  • Y 150mm Piezo
  • Z 10mm
  • R 360⁰ Piezo
  • T 70⁰
Options B C D E
Max sample size Consult with DTU Nanolab staff as weight, dimensions, pumping capacity and technique all play a roll in the sample size