Specific Process Knowledge/Thermal Process: Difference between revisions

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''This page is written by DTU Nanolab  internal''
== Choose a process type ==
== Choose a process type ==


*[[/Oxidation|Oxidation]] - ''grow a thermal oxide''
*[[/Oxidation|Oxidation]] - ''Grow a thermal oxide on silicon''
*[[/Annealing|Annealing]]
*[[/Annealing|Annealing]]
*[[/Dope with Boron|Dope with Boron]]
*[[/Dope with Boron|Doping with Boron]]
*[[/Dope with Phosphorus|Dope with Phosphorus]]
*[[/Dope with Phosphorus|Doping with Phosphorus]]
*[[/Pyrolysis|Resist pyrolysis]]


== Choose an equipment to use ==
== Choose an equipment to use ==


*[[/A1 Bor Drive-in furnace|A1 Bor Drive-in furnace]] - ''For oxidation of new wafers and for drive-in of Boron pre-dep''
'''A stack furnaces:'''
*[[/A2 Bor Pre-dep furnace|A2 Bor Pre-dep furnace]] - ''Dope with Boron: For predeposition of Boron on wafers''
*[[/A1 Bor Drive-in furnace|Boron Drive-in + Predep furnace (A1)]] - ''For oxidation and annealing of Si wafers, and for boron pre-deposition (doping) and for drive-in afterwards''
*[[/A3 Phosphor Drive-in furnace|A3 Phosphor Drive-in furnace]] - ''For oxidation of new wafers and for drive in of Phosphorus pre-dep''
*[[/A2 Gate Oxide furnace|Gate Oxide furnace (A2)]] - Not in use
*[[/A4 Phosphor Pre-dep furnace|A4 Phosphor Pre-dep furnace]] - ''Dope with Phosphorus: For predeposition of Phosphorus on wafers''  
*[[/A3 Phosphor Drive-in furnace|Phosphorus Drive-in furnace (A3)]] - ''For oxidation and annealing of Si wafers and for drive-in after phosphorus pre-dep''
*[[/C1 Furnace Anneal-oxide|C1 Furnace Anneal-oxide]] - ''For oxidation and annealing, up to 6" wafer''
*[[/A4 Phosphor Pre-dep furnace|Phosphorus Predep furnace (A4)]] - ''For pre-deposition (doping) of phosphorus on Si wafers''
*[[/C2 Gate Oxide furnace|C2 Gate Oxide furnace]] - ''For growing of Gate Oxide on new wafers''
 
*[[/C3 Anneal-bond furnace|C3 Anneal-bond furnace]] - ''For annealing and annealing of bonded wafers''
'''C stack furnaces:'''
*[[/C4 Aluminium Anneal furnace|C4 Aluminium Anneal furnace]] - ''For oxidation and annealing of wafers containing Aluminium''
*[[/C1 Furnace Anneal-oxide|Anneal-oxide furnace (C1)]] - ''For oxidation and annealing of 100 mm and 150 mm wafers''
*[[/Furnace Noble|Furnace Noble]] - ''For non-clean annealing and oxidation''
*[[/C2 Furnace III-V oxidation |III-V oxidation furnace (C2)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/Furnace APOX|Furnace APOX]] - ''Furnace for growing very thick oxide''
*[[/C3 Anneal-bond furnace|Anneal-bond furnace (C3)]] - ''For oxidation and annealing of bonded wafers''
*[[/Jipelec RTP|Jipelec RTP]] - ''For Rapid Thermal Anneal of III-V materials and Silicon based material''
*[[/C4 Aluminium Anneal furnace|Aluminium Anneal furnace (C4)]] - ''For annealing and oxidation of wafers containing e.g. aluminium, Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> ''
*[[/BCB Curing Oven|BCB Curing Oven]] - ''...''
 
*[[/Resist Pyrolysis Furnace|Resist Pyrolysis Furnace]] - ''For resist pyrolysis of different resist layers''
'''E stack furnaces:'''
*[[/E1 Furnace Oxidation (8")|Oxidation (8") furnace (E1)]] - ''For oxidation and annealing of 150 mm and 200 mm wafers''
 
'''Other furnaces:'''
*[[/Resist Pyrolysis furnace |Resist Pyrolysis (former Multipurpose Anneal) furnace]] - ''For mainly resist pyrolysis''
*[[/RTP Jipelec 2|RTP2 Jipelec]] - ''For rapid thermal annealing of III-V materials, Si-based materials and some metals''
*[[/RTP Annealsys|RTP Annealsys]] - ''For rapid thermal annealing, rapid thermal oxidation and smoothing of Si-based materials.''
*[[/BCB Curing Oven|BCB Curing oven]] - ''For resist curing and metal alloying''layers''
 
== Rules for storage and RCA cleaning of wafers to the A and C stack furnaces ==
 
*[[/Storage and cleaning of wafer to the A, B, C and E stack furnaces|Storage and cleaning of wafer to the A and C stack furnaces]]
 
 
== Manual for the furnace computer to the A, B, C and E stack furnaces ==
 
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in [https://labmanager.dtu.dk/d4Show.php?id=1926| LabManager] (login required):
 
== Decommissioned equipment ==


The Resist Pyrolysis Furnace is used for resist pyrolysis, where samples with different resist layers are heated up to maximum 1000°C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample
*[[/Jipelec RTP|RTP Jipelec]] - ''For rapid thermal annealing of III-V materials and Si-based materials''
*[[/Furnace APOX|APOX furnace]] - ''For growing of very thick oxide layers''
*[[/D4 III-V Oven|III-V Oven (D4)]] - ''For oxidation of Al<sub>x</sub>GaAs layers.''
*[[/Resist Pyrolysis Furnace|Old Resist Pyrolysis furnace]] - ''For pyrolysis of different resist
*[[/Furnace Noble|Noble furnace]] - ''For annealing and oxidation of non-clean wafers''

Latest revision as of 13:57, 26 February 2024

Feedback to this page: click here

This page is written by DTU Nanolab internal


Choose a process type

Choose an equipment to use

A stack furnaces:

C stack furnaces:

E stack furnaces:

Other furnaces:

Rules for storage and RCA cleaning of wafers to the A and C stack furnaces


Manual for the furnace computer to the A, B, C and E stack furnaces

The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here in LabManager (login required):

Decommissioned equipment