Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300: Difference between revisions

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==IBE/IBSD Ionfab 300: milling, dry etching and deposition in the same tool==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300 click here]'''
[[Image:IBE_IBSD_udstyret_i_RR1.jpg|500x500px|thumb|IBE IBSD: positioned in cleanroom 1]]
[[Category: Equipment |Etch IBE]]
[[Category: Etch (Dry) Equipment|IBE]]
[[Category: Thin Film Deposition|IBE]]
<br> {{CC-bghe1}}
 
 
==IBE/IBSD Ionfab 300: milling and dry etching ==
[[Image:IBE_IBSD_udstyret_i_RR1.jpg|300x300px|thumb|IBE and IBSD: positioned in cleanroom A-1, {{photo1}}]]
 
IBE/IBSD Ionfab 300 was manufactured by Oxford Instruments Plasma Technology [https://plasma.oxinst.com/products/ion-beam/ionfab]. It was installed at Nanolab in 2011. It was originally installed with the capability of doing both  IBE and IBSD. In 2022 we have decommissioned the IBSD part.




IBE: Ion Beam Etch
IBE: Ion Beam Etch


IBSD: Ion Beam Sputter Deposition
IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022)


This Ionfab300 from Oxford Instruments is capable of of both ion sputter etching/milling and sputter deposition.
This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling.
The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).
The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).
'''The user manual and contact information can be found in LabManager:'''
<!-- remember to remove the type of documents that are not present -->
<!-- give the link to the equipment info page in LabManager: -->
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=267  IBE/IBSD Ionfab 300+ in LabManager]


==Process information==
==Process information==
===Etch===
===Etch===
*[http://www.semicore.com/reference/sputtering-yields-reference Compare sputter rates in different materials]
*[[/IBE process trends|Some general process trends]]
*[[/IBE process trends|Some general process trends]]
*[[/SIMS settings|SIMS settings]]
*Results from the acceptance test:
*Results from the acceptance test:
**[[/IBE Au etch|Au etch with zep520A as masking material]]
**[[/IBE Au etch#Results from the acceptance test in February 2011|Au etch with zep520A as masking material]]
**[[/IBE Ti etch|Ti etch with zep 520A as masking material]]
**[[/IBE Ti etch|Ti etch with zep 520A as masking material]]
**Au etch with Ti as masking material
*[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe]]
*[[/IBE magnetic stack etch|Magnetic stack containing Ta/MnIr/NiFe etch]]
*Etch in Stainless steel with X as masking material
*Process develop
*Process develop
**[[/Etch slow|Etch slow: resist can be removed with actone after etch]]
**[[/Etch slow|Etch slow: resist can be removed with acetone after etch]]
**[[/IBE Si etch|Si etching using AZ-resist at masking material]]
**[[/IBE Si etch|Si etching using AZ-resist at masking material]]
**[[/IBE Au etch#IBE Au etch with Ti mask|Au etch with Ti as masking material]]
**[[/IBE blazed gratings|Etching of blazed gratings]]
**[[/HfO2 etch|HfO2 etch in deep trenches]]


===Deposition===
===Deposition (deposition has been decommissioned on the system)===
*[[/Crystal Settings|Crystal Thickness Monitor Settings]]
*Results from the acceptance test:
*Results from the acceptance test:
**[[/IBSD of TiO2|Deposition of TiO2]]
**[[/IBSD of TiO2|Deposition of TiO2]]
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**[[/IBSD of Si|Deposition of Si]]
**[[/IBSD of Si|Deposition of Si]]


==A rough overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters==
==An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="10"  
Line 36: Line 57:
|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
*Ar sputter etch of various materials. For example many metals and alloys.  
*Ar sputter etch of various materials. For example many metals and alloys.  
*Reactive Ion beam etch using F (or Cl)
*Reactive Ion beam etch using F
*Sputter deposition of for example high quality optical layers
|style="background:WhiteSmoke; color:black"|.
|style="background:WhiteSmoke; color:black"|.
|-
|-
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|style="background:LightGrey; color:black"|Uniformity
|style="background:LightGrey; color:black"|Uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Typical within +-2%
*Typical within &plusmn;2%
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="1"|Process parameters
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Gas flows
|style="background:LightGrey; color:black"|Gas flows
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Etch source:
Etch source:
*Ar: 0-40 sccm
*Ar: 0-40 sccm
*O<math>_2</math>: 0-100 sccm
*O<sub>2</sub>: 0-100 sccm
*CHF<math>_3</math>: 0-100 sccm
*CHF<sub>3</sub>: 0-100 sccm
*Cl<math>_2</math>: 0-30 sccm
*N<sub>2</sub>: 0-1000 sccm
*N<math>_2</math>: 0-1000 sccm
|-
Deposition source:
|style="background:LightGrey; color:black"|Chamber temperature
*Ar: 0-40 sccm
|style="background:WhiteSmoke; color:black"|
*O<math>_2</math>: 0-100 sccm
*0-60 degrees Celcius
|-
|style="background:LightGrey; color:black"|Platen temperature
|style="background:WhiteSmoke; color:black"|
*5-60 degrees Celcius
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
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*Polymers
*Polymers
*Capton tape
*Capton tape
*Any other material, please ask
|-  
|-  
| style="background:LightGrey; color:black"|Possible masking material
| style="background:LightGrey; color:black"|Possible masking material
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Photoresist/e-beam resist
*Photo resist/e-beam resist
*Ti
*Ti
*You are allowed to try with any of the materials on the list above.
*You are allowed to try with any of the materials on the list above.
|-  
|-  
|}
|}

Latest revision as of 13:07, 20 October 2023

Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated


IBE/IBSD Ionfab 300: milling and dry etching

IBE and IBSD: positioned in cleanroom A-1, Photo: DTU Nanolab internal

IBE/IBSD Ionfab 300 was manufactured by Oxford Instruments Plasma Technology [1]. It was installed at Nanolab in 2011. It was originally installed with the capability of doing both IBE and IBSD. In 2022 we have decommissioned the IBSD part.


IBE: Ion Beam Etch

IBSD: Ion Beam Sputter Deposition (has been decommissioned 2022)

This Ionfab300 from Oxford Instruments is capable of of ion sputter etching/milling. The etching/milling with Argon alone is done by pure physical sputtering of the surface. This causes redeposition on the sidewalls leaving side wall angles at typically between 70-90 degrees (often closest to 70 degrees).


The user manual and contact information can be found in LabManager:

IBE/IBSD Ionfab 300+ in LabManager

Process information

Etch

Deposition (deposition has been decommissioned on the system)

An overview of the performance of IBE/IBSD Ionfab 300 and some process related parameters

Purpose
  • Ar sputter etch of various materials. For example many metals and alloys.
  • Reactive Ion beam etch using F
 .
Performance Etch rates

Typical 1-100 nm/min depending om material and process parameters

Anisotropy
  • Typical profiles: 70-90 degrees
Uniformity
  • Typical within ±2%
Process parameters Gas flows

Etch source:

  • Ar: 0-40 sccm
  • O2: 0-100 sccm
  • CHF3: 0-100 sccm
  • N2: 0-1000 sccm
Chamber temperature
  • 0-60 degrees Celcius
Platen temperature
  • 5-60 degrees Celcius
Substrates Batch size
  • One 8" wafer per run
  • One 6" wafer per run (needs carrier)
  • One 4" wafer per run (needs carrier)
  • One 2" wafer per run (needs carrier)
Materials allowed
  • Silicon, silicon oxides, silicon nitrides
  • Metals from the +list
  • Metals from the -list
  • Alloys from the above list
  • Stainless steel
  • Glass
  • III-V materials
  • Resists
  • Polymers
  • Capton tape
  • Any other material, please ask
Possible masking material
  • Photo resist/e-beam resist
  • Ti
  • You are allowed to try with any of the materials on the list above.
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