Specific Process Knowledge/Thin film deposition/Deposition of Palladium: Difference between revisions

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Palladium can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
 
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Palladium&action=edit click here]'''
 
<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
 
===Palladium deposition===
Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.
 
==Sputtering of Palladium==
 
Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:
 
 
*[[/Pd sputtering in Sputter System (Lesker) |Pd sputtering in Sputter System (Lesker)]]
 
==Equipment comparison==
In the chart below you can compare the different deposition equipment:




{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation (Alcatel)
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! E-beam evaporation (Leybold)
! E-beam evaporation ([[Specific_Process_Knowledge/Thin_film_deposition/Wordentec|Wordentec]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Sputter-System (Lesker)]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
 
|-  
|-  
| Batch size
|-style="background:WhiteSmoke; color:black"
|
! General description
*Up to 1x4" wafers
| E-beam deposition of Pd
*smaller pieces
| E-beam deposition of Pd
|
| Sputter deposition of Pd
*8x4" wafers or
| Sputter deposition of Pd
*5x6" wafers
|-
|-
| Pre-clean
|-style="background:Lightgrey; color:black"
! Pre-clean
|Ar ion source
|none
|RF Ar clean
|RF Ar clean
|Ar ion bombartment
|RF Ar clean
|-
|-style="background:WhiteSmoke; color:black"
! Layer thickness
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - 600 nm*
|10 Å - ? ''discuss with staff''
|-
|-
| Layer thickness
|-style="background:Lightgrey; color:black"
|10Å to 1µm
! Deposition rate
|10Å to 1500Å
|0.5 Å/s to 10Å/s
|2 Å/s to 10Å/s
|Up to 4.3 Å/s
| Not yet known - discuss with staff
|-
|-
| Deposition rate
|-style="background:WhiteSmoke; color:black"
|2Å/s to 15Å/s
! Batch size
|1Å/s to 5Å/s
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*smaller wafers and pieces
|
*Up to 6x6" wafers (deposition on one wafer at the time)
*Up to 6x4" wafers (deposition on one wafer at the time)
*smaller wafers and pieces
|
*1x4" wafer or
*1x6" wafer or
*several small samples
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-
|-style="background:Lightgrey; color:black"
!Allowed materials
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
| Almost any that do not degas
|-style="background:WhiteSmoke; color:black"
! Comment
|
|
|
|
|}
|}
'''*''' ''If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.''

Latest revision as of 10:10, 9 June 2023

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Palladium deposition

Palladium can be deposited by e-beam evaporation or DC sputtering at DTU Nanolab.

Sputtering of Palladium

Palladium may be sputter deposited in the sputter-system (Lesker). See process results here:


Equipment comparison

In the chart below you can compare the different deposition equipment:


E-beam evaporation (Temescal) E-beam evaporation (Wordentec) Sputter deposition (Sputter-System (Lesker)) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Pd E-beam deposition of Pd Sputter deposition of Pd Sputter deposition of Pd
Pre-clean Ar ion source none RF Ar clean RF Ar clean
Layer thickness 10 Å - 600 nm* 10 Å - 600 nm* 10 Å - 600 nm* 10 Å - ? discuss with staff
Deposition rate 0.5 Å/s to 10Å/s 2 Å/s to 10Å/s Up to 4.3 Å/s Not yet known - discuss with staff
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller wafers and pieces
  • Up to 6x6" wafers (deposition on one wafer at the time)
  • Up to 6x4" wafers (deposition on one wafer at the time)
  • smaller wafers and pieces
  • 1x4" wafer or
  • 1x6" wafer or
  • several small samples
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials Almost any that do not degas
Comment

* If depositing more than 600 nm, please write to metal@nanolab.dtu.dk well in advance to ensure that enough material is present.

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