Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Characterization/Profiler/Optical_Profiler_(Sensofar)_acceptance_test click here]''' | |||
=<span style="color:#FF0000"> This optical profiler has been decommissioned and replaced by the S Neox system, which is very similar </span> = | |||
=Results from the Optical Profiler (Sensofar) acceptance test= | =Results from the Optical Profiler (Sensofar) acceptance test= | ||
The acceptance test was performed in January 2012 by ST Instruments and Sensofar together with | The acceptance test was performed in January 2012 by ST Instruments and Sensofar together with | ||
Pernille V. Larsen @ | Pernille V. Larsen@ DTU nanolab and Berit G. Herstrøm @ DTU nanolab. | ||
==This Table shows an overview of the acceptance tests== | ==This Table shows an overview of the acceptance tests== | ||
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Measurement: Trench depth with aspect ratio 1:10, 1:11 and 1:13 on a 10µm, 8mm and 6.4µm wide trenches respectively | Measurement: Trench depth with aspect ratio 1:10, 1:11 and 1:13 on a 10µm, 8mm and 6.4µm wide trenches respectively | ||
Acceptance criteria:Depth 100±2 µm, 91±2µm and 85±2µm. The SEM profile images of the three trenches are shown here: | Acceptance criteria: Depth 100±2 µm, 91±2µm and 85±2µm. The SEM profile images of the three trenches are shown here: | ||
{| border="1" cellspacing="1" cellpadding="2" | {| border="1" cellspacing="1" cellpadding="2" | ||
! | ! | ||
[[image:Sensofar_A1_SEM.jpg| | [[image:Sensofar_A1_SEM.jpg|200x200px|thumb|center|A1]] | ||
! | ! | ||
[[image:Sensofar_A2_SEM.jpg| | [[image:Sensofar_A2_SEM.jpg|200x200px|thumb|center|A2]] | ||
! | ! | ||
[[image:Sensofar_A3_SEM.jpg| | [[image:Sensofar_A3_SEM.jpg|200x200px|thumb|center|A3]] | ||
|} | |} | ||
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==== | ====Settings for methode no. 1 for test no. 1, 2 and 3: confocal==== | ||
Recipe: Trench | Recipe: Trench | ||
*Operation mode: trench | *Operation mode: trench | ||
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**Dual - bottom up | **Dual - bottom up | ||
***top: 8µm | ***top: 8µm | ||
***Gap: 91µm (the trench depth) | ***Gap: 91µm (<- choose the trench depth) | ||
***Bottom: 8µm | ***Bottom: 8µm | ||
**Speed factor: 1x | **Speed factor: 1x | ||
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*Objective: Interferometric 50x DI | *Objective: Interferometric 50x DI | ||
*Z scan: VSI | *Z scan: VSI | ||
*Light | *Light source: increased gain and contrast | ||
==Results of acceptance test no. 4== | ==Results of acceptance test no. 4== | ||
Sample material: Patterned | Sample material: Patterned flat sample of glass | ||
Measurement: Depth of pattern | Measurement: Depth of pattern | ||
Standard profiler measurement: | Standard profiler measurement:335 nm | ||
Acceptance criteria:Depth within ±1% from a standard profiler measurement (331.65nm-338.35nm) and repeatability (3 successive measurements) within 0.1% | Acceptance criteria:Depth within ±1% from a standard profiler measurement (331.65nm-338.35nm) and repeatability (3 successive measurements) within 0.1% | ||
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Treshold: 1% | Treshold: 1% | ||
Average 4 images (to reduce noise) | |||
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| align="center" style="background:#f0f0f0;"|'''''' | | align="center" style="background:#f0f0f0;"|'''''' | ||
| align="center" style="background:#f0f0f0;"|'''Measured depth [nm]''' | | align="center" style="background:#f0f0f0;"|'''Measured depth [nm]''' | ||
| align="center" style="background:#f0f0f0;"|'''Repeated 20170925 with cover off''' | |||
| align="center" style="background:#f0f0f0;"|'''Repeated 20180816 after repair''' | |||
|- | |- | ||
| 1||337.5 | | 1||337.5||347.9||341.1 | ||
|- | |- | ||
| 2||336.5 | | 2||336.5||333.9||340.4 | ||
|- | |- | ||
| 3||334.7 | | 3||334.7||341.5||337.2 | ||
|- | |- | ||
| 4||335.5 | | 4||335.5||343.2||330.8 | ||
|- | |- | ||
| 5||339.2 | | 5||339.2||347.7||339.0 | ||
|- | |- | ||
| 6||337.2 | | 6||337.2||345.4||340.0 | ||
|- | |- | ||
| 7||334.2 | | 7||334.2||341.8||338.8 | ||
|- | |- | ||
| 8||335.5 | | 8||335.5||337.9||339.8 | ||
|- | |- | ||
| 9||341.1 | | 9||341.1||342.1||334.6 | ||
|- | |- | ||
| 10||344.4 | | 10||344.4||335.9||336.4 | ||
|- | |- | ||
|Average depth|| | |Average depth||337.58||341.73||337.82 | ||
|- | |- | ||
|Repeatability||3% (the bad repeatability was accepted due to the high noise level in the room) | |Repeatability||3.0% (the bad repeatability was accepted due to the high noise level in the room)||4.1%||3.0% | ||
|} | |} | ||
==Results of acceptance test no. 5== | ==Results of acceptance test no. 5== | ||
Sample: Flat sample of silicon with thick patterned oxide. | Sample: Flat sample of silicon with thick patterned oxide (APOX). | ||
Measurement: Step height of patterned thick (10 µm) oxide on top of a silicon wafer.The pattern is aprox. 7µm thick | Measurement: Step height of patterned thick (10 µm) oxide on top of a silicon wafer. The pattern is aprox. 7µm thick. | ||
Acceptance criteria: Step height must be within ±3% of a SEM profile measurement. See the SEM profile here: | Acceptance criteria: Step height must be within ±3% of a SEM profile measurement. See the SEM profile here: | ||
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{| border="1" cellspacing="1" cellpadding="2" | {| border="1" cellspacing="1" cellpadding="2" | ||
! | ! | ||
[[Image:Sensofar_A5_SEM.jpg| | [[Image:Sensofar_A5_SEM.jpg|200x200px|thumb|center|A5]] | ||
|} | |} | ||
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'''Settings:''' | '''Settings:''' | ||
Two different setting were tried out, the second was the most | Two different setting were tried out, the second was the most successful: | ||
Setting no. 1: | Setting no. 1: | ||
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{| border="1" cellspacing="1" cellpadding="2" | {| border="1" cellspacing="1" cellpadding="2" | ||
! | ! | ||
[[image:Sensofar_A9_SEM.jpg| | [[image:Sensofar_A9_SEM.jpg|200x200px|thumb|center|SEM profile image of structure]] | ||
|} | |} | ||
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Measurement:Film thickness measurement of transparent thin film | Measurement:Film thickness measurement of transparent thin film | ||
Acceptance criteria:SiO2 thickness 28±1 nm | Acceptance criteria: SiO2 thickness 28±1 nm | ||
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==Results of acceptance test no. 11== | ==Results of acceptance test no. 11== | ||
Sample:120 nm nitride on 110 nm oxide on a silicon substrate | Sample: 120 nm nitride on 110 nm oxide on a silicon substrate | ||
Measurement:Measurements of multiple stacks | Measurement: Measurements of multiple stacks | ||
Acceptance criteria: Within ±2% on each layer from an ellipsometer measurement (SiO2: 112nm, Si3N4: 139nm) | Acceptance criteria: Within ±2% on each layer from an ellipsometer measurement (SiO2: 112nm, Si3N4: 139nm) | ||
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Sample: Si with 1.4 µm patterned AZ-resist on 50µm pillars | Sample: Si with 1.4 µm patterned AZ-resist on 50µm pillars | ||
Measurement:Film thickness measurements of transparent films on small structure | Measurement: Film thickness measurements of transparent films on small structure | ||
Acceptance criteria:Within ±1% from a standard profiler measurement. | Acceptance criteria: Within ±1% from a standard profiler measurement. | ||
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Acceptance criteria: Repeatability within 0.2% | Acceptance criteria: Repeatability within 0.2% | ||
Note: Because the surface roughness of the sample was very low and the noise/vibration level too high we could not obtain the specified | Note: Because the surface roughness of the sample was very low and the noise/vibration level too high we could not obtain the specified repeatability. | ||
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'''Result''' | '''Result''' | ||
*The surface roughness (Ra) was 0.5nm | *The surface roughness (Ra) was 0.5nm | ||
*The | *The repeatability over 10 measurements was 34% | ||
*The maximum deviation in roughness was 0.2nm | *The maximum deviation in roughness was 0.2nm | ||