Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/Etch slow: Difference between revisions
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=Etch slow= | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/Etch_slow click here]''' | ||
{{CC-bghe1}} <br> | |||
=Etch slow (this was tested in 2012 by ''bghe@nanolab'')= | |||
This process development | This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch. | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
Line 7: | Line 9: | ||
!Si etch test1 | !Si etch test1 | ||
!Si etch test2 | !Si etch test2 | ||
!Si etch test3 | |||
|- | |||
!Important note | |||
| | |||
|This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20 | |||
| | |||
|- | |- | ||
|Neutalizer current [mA] | |Neutalizer current [mA] | ||
|450 | |450 | ||
|250 | |250 | ||
|450 | |||
|- | |- | ||
|RF Power [W] | |RF Power [W] | ||
|1200 | |1200 | ||
|1000 | |1000 | ||
|1200 | |||
|- | |- | ||
|Beam current [mA] | |Beam current [mA] | ||
|400 | |400 | ||
|200 | |200 | ||
|400 | |||
|- | |- | ||
|Beam voltage [V] | |Beam voltage [V] | ||
|400 | |400 | ||
|200 | |200 | ||
|400 | |||
|- | |- | ||
|Beam accelerator voltage | |Beam accelerator voltage | ||
|400 | |400 | ||
|200 | |200 | ||
|400 | |||
|- | |- | ||
|Ar flow to neutralizer [sccm] | |Ar flow to neutralizer [sccm] | ||
|6.0 | |||
|6.0 | |6.0 | ||
|6.0 | |6.0 | ||
|- | |- | ||
|Ar flow to beam [sccm] | |Ar flow to beam [sccm] | ||
|6.0 | |||
|6.0 | |6.0 | ||
|6.0 | |6.0 | ||
|- | |- | ||
|Rotation speed [rpm] | |Rotation speed [rpm] | ||
|20 | |||
|20 | |20 | ||
|20 | |20 | ||
|- | |- | ||
|Stage angle [degrees] | |Stage angle [degrees] | ||
|10 | |||
|10 | |10 | ||
|10 | |10 | ||
|- | |- | ||
|Platen temp. [dg. Celcius] | |Platen temp. [dg. Celcius] | ||
|15 | |||
|15 | |15 | ||
|15 | |15 | ||
|- | |- | ||
|He cooling pressure [mTorr] | |He cooling pressure [mTorr] | ||
|37.5 | |||
|37.5 | |37.5 | ||
|37.5 | |37.5 | ||
|- | |- | ||
|Etch material | |Etch material | ||
|Si | |||
|Si | |Si | ||
|Si | |Si | ||
|- | |- | ||
|'''Results''' | |'''Results''' | ||
|'''vvv''' | |||
|'''vvv''' | |'''vvv''' | ||
|'''vvv''' | |'''vvv''' | ||
Line 63: | Line 84: | ||
|40 | |40 | ||
|40 | |40 | ||
|7:15 | |||
|- | |- | ||
|Etch rate in Si [nm/min] | |Etch rate in Si [nm/min] | ||
|19.7 | |19.7 | ||
|3.58 | |3.58 | ||
|19.3 | |||
|- | |- | ||
|Total time in Acetone + ultrasound [min] | |Total time in Acetone + ultrasound [min] | ||
|17 | |17 | ||
|10 | |10 | ||
|20 | |||
|- | |- | ||
|Was the resist completely removed after acetone + ultrasound? | |Was the resist completely removed after acetone + ultrasound? | ||
|no | |no | ||
|yes | |yes | ||
|yes (almost) | |||
|- | |- | ||
|} | |} |
Latest revision as of 15:44, 6 February 2023
Feedback to this page: click here
This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated
Etch slow (this was tested in 2012 by bghe@nanolab)
This process development was done to find an etch recipe that is so gentle that the resist masking material can be removed with acetone + ultrasound within hopefully 10min. This is important when a metal is to be etched as this cannot withstand plasma ashing (to remove reist mask) after the etch.
Parameter | Si etch test1 | Si etch test2 | Si etch test3 |
---|---|---|---|
Important note | This recipe must only be run for 5 min, otherwise the beam acc. current will incrase above 20 | ||
Neutalizer current [mA] | 450 | 250 | 450 |
RF Power [W] | 1200 | 1000 | 1200 |
Beam current [mA] | 400 | 200 | 400 |
Beam voltage [V] | 400 | 200 | 400 |
Beam accelerator voltage | 400 | 200 | 400 |
Ar flow to neutralizer [sccm] | 6.0 | 6.0 | 6.0 |
Ar flow to beam [sccm] | 6.0 | 6.0 | 6.0 |
Rotation speed [rpm] | 20 | 20 | 20 |
Stage angle [degrees] | 10 | 10 | 10 |
Platen temp. [dg. Celcius] | 15 | 15 | 15 |
He cooling pressure [mTorr] | 37.5 | 37.5 | 37.5 |
Etch material | Si | Si | Si |
Results | vvv | vvv | vvv |
Etch time [min] | 40 | 40 | 7:15 |
Etch rate in Si [nm/min] | 19.7 | 3.58 | 19.3 |
Total time in Acetone + ultrasound [min] | 17 | 10 | 20 |
Was the resist completely removed after acetone + ultrasound? | no | yes | yes (almost) |