Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBSD of Si: Difference between revisions

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New page: ==Test of the deposition rate and film characteristics== ===Recipe=== {| border="2" cellspacing="1" cellpadding="3" align="left" ! !Recipe 1 |- |Platen angle |10 degrees |- |Platen rotat...
 
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==Test of the deposition rate and film characteristics==
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si click here]'''
 
==Test of the deposition rate of Silicon and film characteristics==
'''''The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 - '''''
 
'''''with followup by Berit Herstrøm (bghe) @DTU Nanolab.'''''
 
Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab.
 
{| border="2" cellspacing="1" cellpadding="3" align="left"
! 
!Recipe 2 - with the small grids)
|-
|Platen angle
|10 degrees
|-
|Platen rotation speed
|20rpm
|-
|Ar(N) flow
|4 sccm
|-
|Ar(dep. source) flow
|8 sccm
|-
|I(N)
|240mA
|-
|Power setting
|700W
|-
|I(B)
|200mA
|-
|V(B)
|1100V
|-
|Vacc(B)
|400V
|-
|}
 
<br clear="all" />
 
===Results with recipe 2 and the small grids===
 
{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min (2016-08-04 bghe)
 
|-
|Characterization method
|Ellipsometer 3 angles
|-
|Deposition thickness
|50 nm (2016-08-04 bghe)
 
|-
|Deposition rate
|5.0 nm/min
|-
|Refractive index @632nm
|
n=? <br/>
k=?
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|-
|}
 
<br clear="all" />
 


===Recipe===
===Recipe===


{| border="2" cellspacing="1" cellpadding="3" align="left"
{| border="2" cellspacing="1" cellpadding="3" align="left"
!
!&nbsp;
!Recipe 1
!Recipe 1 - with the large grids)
|-
|-
|Platen angle
|Platen angle
Line 33: Line 113:
|Vacc(B)
|Vacc(B)
|400V
|400V
|-
|}
<br clear="all" />
===Results with recipe 1 and the large grids===
{| border="2" cellspacing="1" cellpadding="3" align="left"
!Depostion time
!10 min (before 2013)
!30 min (before 2013)
!30 min (before 2013)
!30 min (2013-10-4)
|-
|Characterization method
|FilmTek
|FilmTek
|Ellipsometer 3 angles
|Ellipsometer 3 angles
|-
|Deposition thickness
|71 nm
|229 nm
|242 nm
|194 nm (2013-10-4)
|-
|Deposition rate
|7.1 nm/min
|7.6 nm/min
|8.1 nm/min
|6.5 nm/min
|-
|Refractive index @632nm
|
n=4.55 <br/>
k=0.826
|
n=4.916 <br/>
k=0.547
|
n=4.589 <br/>
k=0.479
|
n=4.625 <br/>
k=0.653
|-
|Refractive index @1000nm <br/>
@950nm using the ellipsometer
|
n=? <br/>
k=?
|
n=4.297 <br/>
k=0.0836
|
n=4.136 <br/>
k=0.189
|
n=4.206 <br/>
k=0.183
|-
|Refractive index @1550nm <br/>
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=? <br/>
k=?
|
n=3.970 <br/>
k=0.062
|-
|Roughness
|6.1 nm
|10.4 nm
|1.1 nm
|0.9 nm
|-
|-
|}
|}


<br clear="all" />
<br clear="all" />

Latest revision as of 14:38, 22 January 2024

Feedback to this page: click here

Test of the deposition rate of Silicon and film characteristics

The work in this section was done by Kristian Hagsted Rasmussen @DTU Danchip before 2012 -

with followup by Berit Herstrøm (bghe) @DTU Nanolab.

Please note that it is from 2022 no longer possible to deposit Si with the Ion beam etcher here at Nanolab.

  Recipe 2 - with the small grids)
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 240mA
Power setting 700W
I(B) 200mA
V(B) 1100V
Vacc(B) 400V


Results with recipe 2 and the small grids

Depostion time 10 min (2016-08-04 bghe)
Characterization method Ellipsometer 3 angles
Deposition thickness 50 nm (2016-08-04 bghe)
Deposition rate 5.0 nm/min
Refractive index @632nm

n=?
k=?

Refractive index @1000nm

@950nm using the ellipsometer

n=?
k=?

Refractive index @1550nm

n=?
k=?



Recipe

  Recipe 1 - with the large grids)
Platen angle 10 degrees
Platen rotation speed 20rpm
Ar(N) flow 4 sccm
Ar(dep. source) flow 8 sccm
I(N) 320mA
Power 700W
I(B) 280mA
V(B) 1100V
Vacc(B) 400V


Results with recipe 1 and the large grids

Depostion time 10 min (before 2013) 30 min (before 2013) 30 min (before 2013) 30 min (2013-10-4)
Characterization method FilmTek FilmTek Ellipsometer 3 angles Ellipsometer 3 angles
Deposition thickness 71 nm 229 nm 242 nm 194 nm (2013-10-4)
Deposition rate 7.1 nm/min 7.6 nm/min 8.1 nm/min 6.5 nm/min
Refractive index @632nm

n=4.55
k=0.826

n=4.916
k=0.547

n=4.589
k=0.479

n=4.625
k=0.653

Refractive index @1000nm

@950nm using the ellipsometer

n=?
k=?

n=4.297
k=0.0836

n=4.136
k=0.189

n=4.206
k=0.183

Refractive index @1550nm

n=?
k=?

n=?
k=?

n=?
k=?

n=3.970
k=0.062

Roughness 6.1 nm 10.4 nm 1.1 nm 0.9 nm


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