Specific Process Knowledge/Thin film deposition/Deposition of V3Si: Difference between revisions
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* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]] - Recommended approach. | * [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC1|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Oxide (PC1), with the V target in Source 5 and the Si target in Source 1]] - <b>Recommended approach.</b> | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study. | * [[Specific Process Knowledge/Thin film deposition/Deposition of Vanadium Silicide/V3Si RF-DC Co-Sputtering in Cluster Lesker PC3|Deposition of Vanadium Silicide (V<sub>3</sub>Si) using RF-DC co-sputtering in Sputter-System Metal-Nitride (PC3), with the V target in Source 2 and the Si target in Source 1]] - Early study. Use with care and only as inspiration! | ||
==Comparison of sputter systems for V<sub>3</sub>Si deposition== | ==Comparison of sputter systems for V<sub>3</sub>Si deposition== | ||