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Molybdenum can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
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== Molybdenum deposition ==
Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.  
 
==Sputtering of Molybdenum==
 
Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Oxide(PC1)]]" and "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-System Metal-Nitride(PC3)]]"). See more in link here and the chart below.
 
*[[Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum/Mo Sputtering in Cluster Lesker PC1|Mo Sputtering in Sputter-System Metal-Oxide(PC1)]]
 




{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|Temescal]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)]])
|-  
|-  
| Batch size
|-style="background:WhiteSmoke; color:black"
! General description
| E-beam deposition of Mo
(line-of-sight deposition)
| Sputter deposition of Mo
(not line-of-sight)
| Sputter deposition of Mo
(not line-of-sight)
|-
|-style="background:LightGrey; color:black"
! Pre-clean
|Ar ion source
|
|
*Up to 1x4" wafers
|RF Ar clean
*smaller pieces
|-
|-
| Pre-clean
|-style="background:WhiteSmoke; color:black"
|RF Ar clean
! Layer thickness
|10Å to 600 nm *
|10Å to 500 Å
|10Å to at least 100 nm (discuss with staff)
|-
|-
| Layer thickness
|-style="background:LightGrey; color:black"
|10Å to 1µm
! Deposition rate
| 1Å/s to 10Å/s
| Depends on process parameters, roughly about 1 Å/s
| At least up to 4 Å/s. See process log.
|-
|-
| Deposition rate
|2Å/s to 15Å/s
|-
|-
|-style="background:WhiteSmoke; color:black"
! Batch size
|
*Up to 4x6" wafers
*Up to 3x8" wafers (ask for holder)
*Many smaller pieces
|
* Pieces or
* 1x4" wafer or
* 1x6" wafer
|
*Up to 10x4" or 6" wafers
*Many smaller pieces
|-
|-style="background:LightGrey; color:black"
!Allowed materials
|
* Silicon
*Silicon oxide
*Silicon (oxy)nitride
*Photoresist
*PMMA
*Mylar
*Metals
*See also the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=429 cross-contamination sheet]
|
* Silicon
* Silicon oxide
* Silicon nitride
* Silicon (oxy)nitride
* Photoresist
* PMMA
* Mylar
* SU-8
|
Almost any as long as it does not outgas.
|-style="background:WhiteSmoke; color:black"
! Comment
|
| Sputter target size 2".
| Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details.
|-
|}
|}
'''*'''  ''Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)''

Latest revision as of 22:51, 16 July 2025

Feedback to this page: click here

Unless otherwise stated, this page is written by DTU Nanolab internal

Molybdenum deposition

Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

Sputtering of Molybdenum

Molybdenum may be sputter deposited in either the single-chamber sputter-system ("Sputter System Lesker") or the cluster-based sputter system ("Sputter-System Metal-Oxide(PC1)" and "Sputter-System Metal-Nitride(PC3)"). See more in link here and the chart below.


E-beam evaporation (Temescal) Sputter deposition (Lesker) Sputter deposition (Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3))
General description E-beam deposition of Mo

(line-of-sight deposition)

Sputter deposition of Mo

(not line-of-sight)

Sputter deposition of Mo

(not line-of-sight)

Pre-clean Ar ion source RF Ar clean
Layer thickness 10Å to 600 nm * 10Å to 500 Å 10Å to at least 100 nm (discuss with staff)
Deposition rate 1Å/s to 10Å/s Depends on process parameters, roughly about 1 Å/s At least up to 4 Å/s. See process log.
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • Many smaller pieces
  • Pieces or
  • 1x4" wafer or
  • 1x6" wafer
  • Up to 10x4" or 6" wafers
  • Many smaller pieces
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon nitride
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8

Almost any as long as it does not outgas.

Comment Sputter target size 2". Sputter target size 3-4" (usually 3"). So far (June 2025) Mo has been deposited in PC1. See process log for details.


* Please send a request to us if you wish to deposit more than 600 nm (write to metal@nanolab.dtu.dk)

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