Specific Process Knowledge/Lithography/Aligners/MAvsMLA: Difference between revisions
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*Wafers | *Wafers | ||
**100mm Si, SSP <100> | **100mm Si, SSP <100> | ||
* | *Resists | ||
**[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] (image reversal resist, but processed positive) | **[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] (image reversal resist, but processed positive) | ||
**[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]] (positive tone resist) | **[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]] (positive tone resist) | ||
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**[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]] | **[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]] | ||
*Exposure | *Exposure | ||
**[[Specific_Process_Knowledge/Lithography/UVExposure | **[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2|Aligner: MA6-2]] | ||
**[[Specific_Process_Knowledge/Lithography/UVExposure | **[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1|Aligner: MA6-1]] (in PolyFabLab) | ||
**[[Specific Process Knowledge/Lithography/UVExposure | **[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2|Aligner: Maskless 02]] | ||
**[[Specific Process Knowledge/Lithography/UVExposure | **[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1|Aligner: Maskless 01]] | ||
*Development (incl. PEB, if relevant) | *Development (incl. PEB, if relevant) | ||
**[[Specific_Process_Knowledge/Lithography/Development/UV_developer|Developer: TMAH UV-lithography]] | **[[Specific_Process_Knowledge/Lithography/Development/UV_developer|Developer: TMAH UV-lithography]] | ||